NTE154
Silicon NPN Transistor
High Voltage Video Output
Description:
The NTE154 is a silicon NPN transistor in a TO39 type package designed for use as a video output
to drive a color CRT.
Features:
D
High Voltage: V
CEO
= 300V Min @ I
C
= 5mA
D
Low Capacitance: C
ob
= 3pF Max @ V
CB
= 20V
D
High Frequency: f
t
= 50MHz Min @ I
C
= 15mA
D
High Power Dissipation: P
D
= 7W @ T
C
= +25擄C
Absolute Maximum Ratings:
(Note 1)
Collector to Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V
Collector to Emitter Voltage (Note 2), V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V
Emitter to Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Total Power Dissipation (Note 3, Note 4), P
D
T
C
= +25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7W
T
A
= +25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Operating Junction Temperature, T
opr
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +200擄C
Lead Temperature (During Soldering, 60sec), T
L
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +300擄C
Note
Note
Note
Note
1.
2.
3.
4.
These ratings are limiting values above which the serviceability of this device may be impaired.
This rating refers to a high current point where collector to emitter voltage is lowest.
These ratings are steady state limits.
These ratings give a maximum junction temperature of +200擄C and junction to case thermal
resistance of +25擄C/W (derating factor of 40mW/擄C); junction to ambient thermal resistance
of +175擄C/W (derating factor of 5.71mW/擄C).
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