NTE152 (NPN) & NTE153 (PNP)
Silicon Complementary Transistors
Audio Power Amplifier, Switch
Description:
The NTE152 (NPN) and NTE153 (PNP) are silicon complementary transistors in a standard TO220
type package designed for general purpose medium power switching and amplifier applications.
Features:
D
Good Linearity of h
FE
Absolute Maximum Ratings:
(T
A
= +25擄C unless otherwise specified)
Collector鈥揃ase Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90V
Collector鈥揈mitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90V
Emitter鈥揃ase Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Emitter Current, I
E
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?A
Base Current, I
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A
Collector Power Dissipation (T
C
= +25擄C), P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W
Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Note 1. NTE152MP is a matched pair of NTE152 with their DC Current Gain (h
FE
) matched to within
10% of each other.
Note 2. Matched complementary pairs are available upon request (NTE55MCP). Matched comple-
mentary pairs have their gain specification (h
FE
) matched to within 10% of each other.
Electrical Characteristics:
(T
A
= +25擄C unless otherwise specified)
Parameter
Collector鈥揈mitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector鈥揈mitter Saturation Voltage
Base鈥揈mitter Voltage
Transition Frequency
Collector Output Capacitance
Symbol
I
CBO
I
EBO
h
FE1
h
FE2
V
CE(sat)
V
BE
f
T
C
ob
Test Conditions
V
CB
= 90V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 5V, I
C
= 0.5A
V
CE
= 5V, I
C
= 3A
I
C
= 3A, I
B
= 0.3A
V
CE
= 5V, I
C
= 3A
V
CE
= 5V, I
C
= 0.5A
V
CB
= 10V, I
E
= 0, f = 1MHz
Min
90
鈥?/div>
鈥?/div>
40
15
鈥?/div>
鈥?/div>
3
鈥?/div>
Typ Max Unit
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
8
85
鈥?/div>
20
10
200
鈥?/div>
1.5
1.5
鈥?/div>
鈥?/div>
V
V
MHz
pF
V
碌A(chǔ)
碌A(chǔ)
V
(BR)CEO
I
C
= 50mA, I
B
= 0
NTE152相關(guān)型號(hào)PDF文件下載
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