NTE14
Silicon PNP Transistor
High Power, Low Frequency Driver
Features:
D
High Power Compact FTR Package: P
C
= 750mW
D
High Breakdown Voltage: V
CEO
= 80V
Absolute Maximum Ratings:
(T
A
= +25擄C unless otherwise specified)
Collector鈥揃ase Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Collector鈥揈mitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter鈥揃ase Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700mA
Collector Dissipation, P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750mW
Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +135擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +135擄C
Electrical Characteristics:
(T
A
= +25擄C unless otherwise specified)
Parameter
Collector鈥揈mitter Breakdown Voltage
Collector鈥揃ase Breakdown Voltage
Emitter鈥揃ase Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector Saturation Voltage
Transition Frequency
Output Capacitance
Symbol
Test Conditions
Min
80
80
5
鈥?/div>
鈥?/div>
120
鈥?/div>
鈥?/div>
鈥?/div>
Typ Max Unit
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
0.2
100
14
鈥?/div>
鈥?/div>
鈥?/div>
0.5
0.5
270
0.4
鈥?/div>
20
V
V
V
碌A
碌A
鈥?/div>
V
MHz
pF
V
(BR)CEO
I
C
= 2mA
V
(BR)CBO
I
C
= 50碌A
V
(BR)EBO
I
E
= 50碌A
I
CBO
I
EBO
h
FE
f
T
C
ob
V
CB
= 50V
V
EB
= 4V
V
CE
= 3V, I
C
= 100mA
V
CE
= 10V, I
E
= 50mA
V
CB
= 10V, I
E
= 0, f = 1MHz
V
CE(sat)
I
C
= 500mA, I
B
= 50mA
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