NTE13
Silicon NPN Transistor
Low Voltage Output Amp
Features:
D
Low Collector鈥揈mitter Saturation Voltage
D
High DC Current Gain
D
An M Type Mold package that Allows Downsizing of Equipment and Automatic Insertion by
Taping and Magazine Packaging
Absolute Maximum Ratings:
Collector鈥揃ase Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Collector鈥揈mitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Emitter鈥揃ase Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V
Collector Current, I
C
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Power Dissipation, P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mW
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Electrical Characteristics:
(T
A
= +25擄C unless otherwise specified)
Parameter
Collector Cutoff Current
Collector鈥揃ase Voltage
Collector鈥揈mitter Voltage
Emitter鈥揃ase Voltage
DC Current Gain
Collector鈥揈mitter Saturation Voltage
Base鈥揈mitter Saturation Voltage
Transistion Frequency
Collector Capaciatnce
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE
Test Conditions
V
CB
= 25V, I
C
= 0
I
C
= 10碌A(chǔ), I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10碌A(chǔ), I
C
= 0
V
CE
= 2V, I
C
= 500mA, Note 1
V
CE
= 2V, I
C
= 1A, Note 1
V
CE(sat)
I
C
= 500mA, I
B
= 20mA
V
BE(sat)
I
C
= 500mA, I
B
= 50mA
f
T
C
ob
V
CB
= 10V, 鈥揑
E
= 50mA
V
CB
= 10V, I
E
= 0, f = 1MHz
Min
鈥?/div>
25
20
12
400
60
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Typ
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
0.13
鈥?/div>
200
10
Max
100
鈥?/div>
鈥?/div>
鈥?/div>
800
鈥?/div>
0.4
1.2
鈥?/div>
鈥?/div>
V
V
MHz
pF
Unit
nA
V
V
V
Note 1. Pulse Test
NTE13 產(chǎn)品屬性
NTE
置換半導(dǎo)體
否
1
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