NTE133
N鈥揅hannel JFET Silicon Transistor
General Purpose AF Amplifier
Absolute Maximum Ratings:
(T
A
= +25擄C unless otherwise specified)
Drain鈥揝ource Voltage, V
DS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Drain鈥揋ate Voltage, V
DG
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Gate鈥揝ource Voltage, V
GS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5V
Gate Current, I
G
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA
Total Device Dissipation (T
A
= +25擄C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Derate Above 25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2mW/擄C
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Lead Temperature (During Soldering, 1/16鈥?from case for 10sec), T
L
. . . . . . . . . . . . . . . . . . . +260擄C
Electrical Characteristics:
(T
A
= +25擄C unless otherwise specified)
Parameter
Gate鈥揝ource Breakdown Voltage
Gate Reverse Current
Symbol
Test Conditions
Min
鈥?5
鈥?/div>
鈥?/div>
鈥?/div>
鈥?.4
0.5
1000
Typ
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Max
鈥?/div>
鈥?
鈥?
鈥?.5
鈥?.0
15
7500
Unit
V
nA
碌A(chǔ)
V
V
mA
碌mho
V
(BR)GSS
I
G
= 1碌A(chǔ), V
DS
= 0
I
GSS
V
GS(off)
V
GS
I
DSS
|y
fs
|
V
GS
= 20V, V
DS
= 0
V
GS
= 20V, V
DS
= 0, T
A
= +150擄C
Gate鈥揝ource Cutoff Voltage
Gate鈥揝ource Voltage
Zero鈥揋ate鈥揤oltage Drain Current
Forward Transfer Admittance
I
D
= 1碌A(chǔ), V
DS
= 15V
I
D
= 50碌A(chǔ), V
DS
= 15V
V
DS
= 15V, V
GS
= 0
V
DS
= 15V, V
GS
= 0, f = 1kHz
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