NTE123AP
Silicon NPN Transistor
Audio Amplifier, Switch
(Compl to NTE159)
Absolute Maximum Ratings:
Collector鈥揈mitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Collector鈥揃ase Voltage, V
CB
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Emitter鈥揃ase Voltage, V
EB
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Continuous Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA
Total Device Dissipation (T
A
= 25擄C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350mW
Derate Above 25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.8mW/擄C
Total Device Dissipation (T
C
= 25擄C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W
Derate Above 25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.0mW/擄C
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Thermal Resistance, Junction to Case, R
胃JC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125擄C/W
Thermal Resistance, Junction to Ambient, R
胃JA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 357擄C/W
Electrical Characteristics:
(T
A
= +25擄C unless otherwise specified)
Parameter
OFF Characteristics
Collector鈥揈mitter Breakdown Voltage
Collector鈥揃ase Breakdown Voltage
Emitter鈥揃ase Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON Characteristics
(Note 1)
DC Current Gain
h
FE
V
CE
= 1V, I
C
= 0.1mA
V
CE
= 1V, I
C
= 1mA
V
CE
= 1V, I
C
= 10mA
V
CE
= 1V, I
C
= 150mA
V
CE
= 1V, I
C
= 500mA
20
40
80
100
40
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
300
鈥?/div>
V
(BR)CEO
I
C
= 1mA, I
B
= 0, Note 1
V
(BR)CBO
I
C
= 0.1mA, I
E
= 0
V
(BR)EBO
I
E
= 0.1mA, I
C
= 0
I
CEV
I
BEV
V
CE
= 35V, V
EB(off)
= 0.4V
V
CE
= 35V, V
EB(off)
= 0.4V
40
60
6
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
0.1
0.1
V
V
V
碌A(chǔ)
碌A(chǔ)
Symbol
Test Conditions
Min
Typ
Max
Unit
Note 1. Pulse Test: Pulse Width
鈮?/div>
300碌s, Duty Cycle
next
NTE123AP相關(guān)型號PDF文件下載
-
型號
版本
描述
廠商
下載
-
英文版
Silicon NPN Transistor UHF Low Noise Wide.Band Amplifier
NTE
-
英文版
Silicon NPN Transistor UHF Low Noise Wide.Band Amplifier
NTE [NTE E...
-
英文版
Silicon Complementary Transistors High Current Amplifier
NTE
-
英文版
Silicon Complementary Transistors High Current Amplifier
NTE [NTE E...
-
英文版
Silicon NPN Transistor Low Voltage Output Amp
NTE
-
英文版
Silicon NPN Transistor Low Voltage Output Amp
NTE [NTE E...
-
英文版
Silicon PNP Transistor High Power, Low Frequency Driver
NTE
-
英文版
Silicon PNP Transistor High Power, Low Frequency Driver
NTE [NTE E...
-
英文版
Silicon NPN Transistor VHF Amp, Mixer, Oscillator, UHF OSC
NTE
-
英文版
Silicon NPN Transistor VHF Amp, Mixer, Oscillator, UHF OSC
NTE [NTE E...
-
英文版
Germanium Complementary Transistors Oscillator, Mixer for AM...
NTE
-
英文版
Germanium Complementary Transistors Oscillator, Mixer for AM...
NTE [NTE E...
-
英文版
RF TRANSISTOR, NPN, 25V; Transistor Polarity:NPN; Collector ...
NTE Electronics
-
英文版
Germanium Complementary Transistors Power Output, Driver
NTE
-
英文版
Germanium Complementary Transistors Power Output, Driver
NTE [NTE E...
-
英文版
BIPOLAR TRANSISTOR, NPN, 24V; Transistor Polarity:NPN; Colle...
NTE Electronics
-
英文版
Germanium PNP Transistor Audio Frequency Power Amplifier
NTE
-
英文版
Germanium PNP Transistor Audio Frequency Power Amplifier
NTE [NTE E...
-
英文版
Germanium PNP Transistor Audio Power Amp
NTE
-
英文版
Germanium PNP Transistor Audio Power Amp
NTE [NTE E...
1
2
3
