NTE1116
Integrated Circuit
Audio Power Amplifier, 5W
Description:
The NTE1116 is a monolithic integrated circuit designed for use as a low frequency class B amplifier.
The external cooling tabs enable 2.5 watts of output power to be achieved without the use of an exter-
nal heat sink and 5 watts of output power using a small area of the P.C. board copper as a heat sink.
Absolute Maximum Ratings:
Supply Voltage, V
S
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Output Peak Current (Non鈥揜epetitive), I
O
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Output Current (Repetitive), I
O
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A
Power Dissipation, P
tot
T
A
= +70擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
T
tab
= +100擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?0擄 to +150擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?0擄 to +150擄C
Thermal Resistance, Junction鈥搕o鈥揟ab, R
thJ鈥揟AB
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12擄C/W
Thermal Resistance, Junction鈥搕o鈥揂mbient (Note 1), R
thJA
. . . . . . . . . . . . . . . . . . . . . . . . . . . 70擄C/W
Note 1. Obtained with tabs soldered to printed circuit with minimized copper area.
Elecrtrical Characteristics:
(T
A
= +25擄C, V
S
= 24V, R
L
= 16鈩?unless otherwise specified)
Parameter
Quiescent Output Voltage (Pin12)
Quiescent Drain Current
Input Bias Current (Pin8)
Output Power
Input Saturation Voltage
Input Sensitivity
Input Resistance (Pin8)
Frequency Response (鈥?dB)
Total Harmonic Distortion
Voltage Gain (Open Loop)
Voltage Gain (Closed Loop)
Symbol
V
O
I
d
I
b
P
O
V
i(rms)
V
i
R
i
B
THD
G
V
G
V
P
O
= 5W, f = 1kHz
f = 1kHz
C3 = 330pF
P
O
= 50mW to 2.5W, f = 1kHz
f = 1kHz
f = 1kHz
THD = 10%, f = 1kHz
Test Conditions
Min
11
鈥?/div>
鈥?/div>
4.4
220
鈥?/div>
鈥?/div>
Typ
12
9
1
5.0
鈥?/div>
80
5
Max Unit
13
20
5
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
V
mA
碌A
W
mV
mV
M鈩?/div>
Hz
%
dB
dB
40 to 20,000
NTE1116 產(chǎn)品屬性
NTE
置換半導體
否
1
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