NTE1100
Integrated Circuit
TV Sound IF Amp, FM IF Amp
Features:
D
High Power Gain: G
P
= 69dB (Typ)
D
Good Limiter Characteristic: V
IN
(lim) = 600碌V (Typ)
D
High Output Voltage: V
OM
= 800V (Typ)
D
Wide Frequency Range: f = 1kHz to 20MHz
D
Operating Supply Voltage Range: V
CC
= 6V to 15V
Absolute Maximum Ratings:
(T
A
= +25擄C unless otherwise specified)
Supply Voltage, V
CC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V
Input Voltage (Between Pin6 and Pin7), V
IN
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
鹵3V
Power Dissipation, P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mW
Derate Above 25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4mW/擄C
Operating Temperature, T
opr
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄
to +75擄C
Storage Temperature, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄
to +125擄C
Electrical Characteristics:
(T
A
= +25擄C unless otherwise specified)
Parameter
Supply Current
Output Current
Input Limiting Voltage
Maximum Output Voltage
Power Gain
IF Voltage Gain
Input Impedance
Parallel Input Resistance
Parallel Input Capacitance
Output Impedance
Parallel Output Resistance
Parallel Output Capacitance
Symbol
I
CC
I
OUT
V
IN(lim)
V
OM
G
P
G
V(IF)
r
ip
c
ip
r
op
c
op
V
CC
= 12V, f = 10.7MHz
V
CC
= 6V
V
CC
= 12V
V
CC
= 12V, f = 10.7MHz
V
CC
= 12V, V
IN
= 10mV, f = 10.7MHz
V
CC
= 12V, f = 10.7MHz
V
CC
= 12V, f = 10.7MHz, 50dB碌V
V
CC
= 12V, f = 10.7MHz
Test Conditions
V
CC
= 12V
Min
鈥?/div>
7.0
鈥?/div>
鈥?/div>
鈥?/div>
66
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Typ
11
8.5
2.5
600
800
69
56
5
6
10
5
Max
14
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
72
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Unit
mA
mA
mA
碌V
mV
dB
dB
NTE1100 產(chǎn)品屬性
NTE
置換半導(dǎo)體
否
1
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