NTE108
Silicon NPN Transistor
High Frequency Amplifier
Description:
The NTE108 is a silicon NPN transistor in a TO92 type case designed for low鈥搉oise, high鈥揻requency
amplifiers, 1GHz local oscillatore, non鈥搉eutralized IF amplifiers, and non鈥搒aturating circuits with rise
and fall times less than 2.5ns.
Absolute Maximum Ratings:
Collector鈥揈mitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V
Collector鈥揃ase Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Emitter鈥揃ase Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V
Continuous Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Total Device Dissipation (T
A
= +25擄C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW
Derate Above 25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12mW/擄C
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Thermal Resistance, Junction鈥搕o鈥揅ase, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +83.3擄C/W
Thermal Resistance, Junction鈥搕o鈥揂mbient (Note 1), R
thJA
. . . . . . . . . . . . . . . . . . . . . . . . . +200擄C/W
Note 1. R
螛JA
is measured with the device soldered into a typical printed circuit board.
Electrical Characteristics:
(T
A
= +25擄C unless otherwise specified)
Parameter
OFF Characteristics
Collector鈥揈mitter Breakdown Voltage
Collector鈥揃ase Breakdown Voltage
Emitter鈥揃ase Breakdown Voltage
Collector Cutoff Current
V
(BR)CEO
I
C
= 3mA, I
B
= 0, Note 2
V
(BR)CBO
I
C
= 1碌A(chǔ), I
E
= 0
V
(BR)EBO
I
E
= 10碌A(chǔ), I
C
= 0
I
CBO
V
CB
= 15V, I
E
= 0
15
30
3
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
10
V
V
V
nA
Symbol
Test Conditions
Min
Typ Max Unit
Note 2. Pulse Test: Pulse Width < 300碌s, Duty Cycle < 1%.
NTE108相關(guān)型號(hào)PDF文件下載
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