NTE100 (PNP) & NTE101 (NPN)
Germanium Complementary Transistors
Oscillator, Mixer for AM Radio,
Medium Speed Switch
Absolute Maximum Ratings:
(T
A
= +25擄C unless otherwise specified)
Collector鈥揃ase Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Collector鈥揈mitter Voltage (Note 1), V
CEO
NTE100 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24V
NTE101 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Emitter鈥揃ase Voltage, V
EBO
NTE100 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V
NTE101 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Collector Current, I
C
NTE100 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
NTE101 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mA
Emitter Current (NTE100 Only), I
E
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Total Device Dissipation, P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mW
Derate Above 25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5mW/擄C
Operating Collector Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +85擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +100擄C
Note 1. Punch鈥搕hrough voltage.
Electrical Characteristics:
(T
A
= +25擄C unless otherwise specified)
Parameter
Collector鈥揃ase Brteakdown Voltage
NTE100
NTE101
Emitter鈥揃ase Breakdown Voltage
NTE100
NTE101
Punch Through Voltage
NTE100
NTE101
Collector Cutoff Current
NTE100
I
CBO
I
E
= 0
V
CB
= 12V
V
CB
= 12V, T
A
= +80擄C
NTE101
V
CB
= 25V
V
PT
V
(BR)EBO
I
C
= 0
Symbol
V
(BR)CBO
I
E
= 0
Test Conditions
I
C
= 20碌A(chǔ)
I
C
= 100碌A(chǔ)
I
E
= 20碌A(chǔ)
I
E
= 100碌A(chǔ)
V
EBfl
= 1V, Note 2
Min
25
25
12
25
24
25
鈥?/div>
鈥?/div>
鈥?/div>
Typ
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
1
40
3
Max
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
5
90
6
Unit
V
V
V
V
V
V
碌A(chǔ)
碌A(chǔ)
碌A(chǔ)
Note 2. V
PT
is determined by measuring the Emitter鈥揃ase floating potential V
EBfl
. The Collector鈥?/div>
Base Voltage, V
CB
, is increased until V
EBfl
= 1V; this value of V
CB
= (V
PT
+ 1V). Care must
be taken not to exceed maximum Collector鈥揃ase Voltage specified under maximum ratings.
NTE100 產(chǎn)品屬性
NTE
置換半導(dǎo)體
否
1
NTE100相關(guān)型號(hào)PDF文件下載
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