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NTD32N06LT4 Datasheet

  • NTD32N06LT4

  • Power MOSFET 32 Amps, 60 Volts, Logic Level(N−Channel ...

  • 8頁

  • ONSEMI

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NTD32N06L
Power MOSFET
32 Amps, 60 Volts, Logic Level
N鈭扖hannel DPAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
http://onsemi.com
V
DSS
60 V
R
DS(ON)
TYP
23.7 mW
N鈭扖hannel
D
I
D
MAX
32 A
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Smaller Package than MTB30N06VL
Lower R
DS(on)
, V
DS(on)
, and Total Gate Charge
Lower and Tighter V
SD
Lower Diode Reverse Recovery Time
Lower Reverse Recovery Stored Charge
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
Typical Applications
G
S
4
Value
60
60
"20
"30
32
22
90
93.75
0.625
2.88
1.5
鈭?5 to
+175
313
Unit
Vdc
Vdc
Vdc
1 2
3
DPAK
CASE 369C
(Surface Mount)
Style 2
4
YWW
32N06L
2
1
3
Drain
Gate
Source
4
Drain
2
YWW
32N06L
1 2 3
Gate Drain Source
Package
DPAK
DPAK
Straight Lead
DPAK
Shipping
鈥?/div>
75 Units/Rail
75 Units/Rail
2500/Tape & Reel
Publication Order Number:
NTD32N06L/D
1
MAXIMUM RATINGS
(T
J
= 25擄C unless otherwise noted)
Rating
Drain鈭抰o鈭扴ource Voltage
Drain鈭抰o鈭扜ate Voltage (R
GS
= 10 MW)
Gate鈭抰o鈭扴ource Voltage
鈭?Continuous
鈭?Non鈭扲epetitive (t
p
v10
ms)
Drain Current
鈭?Continuous @ T
A
= 25擄C
鈭?Continuous @ T
A
= 100擄C
鈭?Single Pulse (t
p
v10
ms)
Total Power Dissipation @ T
A
= 25擄C
Derate above 25擄C
Total Power Dissipation @ T
A
= 25擄C (Note 1)
Total Power Dissipation @ T
A
= 25擄C (Note 2)
Operating and Storage Temperature Range
Single Pulse Drain鈭抰o鈭扴ource Avalanche
Energy 鈭?Starting T
J
= 25擄C (Note 3)
(V
DD
= 50 Vdc, V
GS
= 5 Vdc, L = 1.0 mH,
I
L(pk)
= 25 A, V
DS
= 60 Vdc, R
G
= 25
W)
Thermal Resistance
鈭?Junction鈭抰o鈭扖ase
鈭?Junction鈭抰o鈭扐mbient (Note 1)
鈭?Junction鈭抰o鈭扐mbient (Note 2)
Maximum Lead Temperature for Soldering
Purposes, 1/8鈥?from case for 10 seconds
Symbol
V
DSS
V
DGR
V
GS
V
GS
I
D
I
D
I
DM
P
D
MARKING DIAGRAMS
4
Drain
Adc
Apk
W
W/擄C
W
W
擄C
mJ
T
J
, T
stg
E
AS
3
DPAK
CASE 369D
(Straight Lead)
Style 2
32N06L
Y
WW
Device Code
= Year
= Work Week
擄C/W
R
qJC
R
qJA
R
qJA
T
L
1.6
52
100
260
擄C
ORDERING INFORMATION
Device
NTD32N06L
NTD32N06L鈭?
NTD32N06LT4
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. When surface mounted to FR4 board using 0.5鈥?pad size.
2. When surface mounted to FR4 board using minimum recommended pad
size.
3. Repetitive rating; pulse width limited by maximum junction temperature.
鈥燜or information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
漏
Semiconductor Components Industries, LLC, 2004
1
April, 2004 鈭?Rev. 3

NTD32N06LT4 產(chǎn)品屬性

  • ON Semiconductor

  • MOSFET

  • N-Channel

  • 60 V

  • +/- 20 V

  • 32 A

  • 0.0237 Ohms

  • Single

  • + 175 C

  • SMD/SMT

  • DPAK

  • Reel

  • 128 ns

  • 27 S

  • - 55 C

  • 93.75 W

  • 221 ns

  • 2500

  • 37 ns

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