鈥?/div>
DC鈭扗C Conversion
MAXIMUM RATINGS
(T
J
= 25擄C unless otherwise noted)
Parameter
Drain鈭抰o鈭扴ource Voltage
Gate鈭抰o鈭扴ource
Voltage
Continuous
Drain Current
(Note 1)
Power Dissipa-
tion (Note 1)
Pulsed Drain
Current
Continuous
Non鈭扲epetitive
Steady State
t
p
v10
ms
T
A
= 25擄C
Symbol
V
DSS
V
GS
V
GSM
I
D
Value
鈭?0
$20
$30
鈭?5.5
A
Unit
V
V
V
(BR)DSS
鈭?0 V
R
DS(on)
TYP
130 mW @ 鈭?.0 V
P鈭扖hannel
D
G
S
MARKING DIAGRAMS
4
4
Drain
YWW
T
20P06L
2
1
3
Drain
Gate
Source
4
Drain
1
YWW
T
20P06L
1 2 3
Gate Drain Source
Publication Order Number:
NTD20P06L/D
Steady State
T
A
= 25擄C
P
D
I
DM
T
J
,
T
STG
E
AS
65
$50
鈭?5 to
175
304
W
1 2
A
擄C
mJ
3
DPAK
CASE 369C
Style 2
4
t
p
= 10
ms
Operating Junction and Storage Temperature
Single Pulse Drain鈭抰o鈭扴ource Avalanche
Energy (V
DD
= 25 V, V
GS
= 5 V, I
PK
= 15 A,
L = 2.7 mH, R
G
= 25
W)
Lead Temperature for Soldering Purposes
(1/8鈥?from case for 10 s)
T
L
260
擄C
3
DPAK
CASE 369D
Style 2
20P06L
Y
WW
Device Code
= Year
= Work Week
2
THERMAL RESISTANCE RATINGS
Parameter
Junction鈭抰o鈭扖ase (Drain)
Junction鈭抰o鈭扐mbient 鈥?Steady State (Note 1)
Junction鈭抰o鈭扐mbient 鈥?Steady State (Note 2)
Symbol
R
qJC
R
qJA
R
qJA
Max
2.3
80
110
Unit
擄C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface鈭抦ounted on FR4 board using 1 in sq. pad size
(Cu area = 1.127 in sq. [1 oz] including traces)
2. Surface鈭抦ounted on FR4 board using the minimum recommended pad size
(Cu area = 0.412 in sq.)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
漏
Semiconductor Components Industries, LLC, 2004
1
August, 2004 鈭?Rev. 3