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NTB25P06T4G Datasheet

  • NTB25P06T4G

  • Power MOSFET −60 V, −27.5 A, P−Channel D2P...

  • 6頁(yè)

  • ONSEMI

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NTB25P06
Power MOSFET
鈭?0 V, 鈭?7.5 A, P鈭扖hannel D
2
PAK
Designed for low voltage, high speed switching applications and to
withstand high energy in the avalanche and commutation modes.
Features
鈥?/div>
Pb鈭扚ree Packages are Available
Typical Applications
V
(BR)DSS
鈭?0 V
http://onsemi.com
R
DS(on)
TYP
65 mW @ 鈭?0 V
I
D
MAX
鈭?7.5 A
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
PWM Motor Controls
Power Supplies
Converters
Bridge Circuits
P鈭扖hannel
D
MAXIMUM RATINGS
(T
J
= 25擄C unless otherwise noted)
Rating
Drain鈭抰o鈭扴ource Voltage
Gate鈭抰o鈭扴ource Voltage
鈭?Continuous
鈭?Non鈭扲epetitive (t
p
v10
ms)
Drain Current
鈭?Continuous @ T
A
= 25擄C
鈭?Single Pulse (t
p
v10
ms)
Total Power Dissipation @ T
A
= 25擄C
Operating and Storage
Temperature Range
Single Pulse Drain鈭抰o鈭扴ource Avalanche
Energy 鈭?Starting T
J
= 25擄C
(V
DD
= 25 V, V
GS
= 10 V,
I
L(pk)
= 20 A, L = 3 mH, R
G
= 25
W)
Thermal Resistance
鈭?Junction鈭抰o鈭扖ase
鈭?Junction鈭抰o鈭扐mbient (Note 1)
鈭?Junction鈭抰o鈭扐mbient (Note 2)
Maximum Lead Temperature for Soldering
Purposes, (1/8鈥?from case for 10 s)
Symbol
V
DSS
V
GS
V
GSM
I
D
I
DM
P
D
T
J
, T
stg
E
AS
Value
鈭?0
"15
"20
27.5
80
120
鈭?5 to
+175
600
Unit
V
V
Vpk
4
A
Apk
W
擄C
mJ
1
2
3
D
2
PAK
CASE 418B
STYLE 2
NTB25P06
YWW
G
S
MARKING DIAGRAM
& PIN ASSIGNMENT
Drain
Drain
Gate
Source
擄C/W
R
qJC
R
qJA
R
qJA
T
L
1.25
46.8
63.2
260
擄C
NTB25P06 = Device Code
Y
= Year
WW
= Work Week
ORDERING INFORMATION
Device
NTB25P06
NTB25P06G
NTB25P06T4
NTB25P06T4G
Package
D
2
PAK
D
2
PAK
(Pb鈭扚ree)
D
2
PAK
D
2
PAK
(Pb鈭扚ree)
Shipping
鈥?/div>
50 Units/Rail
50 Units/Rail
800/Tape & Reel
800/Tape & Reel
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. When surface mounted to an FR4 board using 1鈥?pad size
(Cu Area 1.127 in
2
).
2. When surface mounted to an FR4 board using the minimum recommended
pad size (Cu Area 0.412 in
2
).
鈥燜or information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
漏
Semiconductor Components Industries, LLC, 2004
1
August, 2004 鈭?Rev. 2
Publication Order Number:
NTB25P06/D

NTB25P06T4G 產(chǎn)品屬性

  • 800

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • -

  • MOSFET P 通道，金屬氧化物

  • 標(biāo)準(zhǔn)型

  • 60V

  • 27.5A

  • 82 毫歐 @ 25A，10V

  • 4V @ 250µA

  • 50nC @ 10V

  • 1680pF @ 25V

  • 120W

  • 表面貼裝

  • TO-263-3，D²Pak（2 引線+接片），TO-263AB

  • D2PAK

  • 帶卷 (TR)

  • NTB25P06T4GOSNTB25P06T4GOS-NDNTB25P06T4GOSTR

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