NSS40400CF8T1G
40 V, 7 A, Low V
CE(sat)
PNP Transistor
ON Semiconductor鈥檚 e
2
PowerEdge family of low V
CE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (V
CE(sat)
) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical application are DC鈭扗C converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e
2
PowerEdge devices to be
driven directly from PMU鈥檚 control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
MAXIMUM RATINGS
(T
A
= 25擄C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current 鈭?Continuous
Collector Current 鈭?Peak
Electrostatic Discharge
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
CM
ESD
Max
鈭?0
鈭?0
鈭?.0
鈭?.0
鈭?.0
Unit
Vdc
Vdc
Vdc
Adc
A
ChipFET]
CASE 1206A
STYLE 4
5
EMITTER
http://onsemi.com
40 VOLTS
7.0 AMPS
PNP LOW V
CE(sat)
TRANSISTOR
EQUIVALENT R
DS(on)
78 mW
COLLECTOR
1, 2, 3, 6, 7, 8
4
BASE
HBM Class 3B
MM Class C
PIN
CONNECTIONS
C 8
C 7
C 6
E 5
1 C
2 C
3 C
4 B
1
MARKING
DIAGRAM
8
VS9 M
G
7
6
5
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation, T
A
= 25擄C
Derate above 25擄C
Thermal Resistance,
Junction鈭抰o鈭扐mbient
Total Device Dissipation, T
A
= 25擄C
Derate above 25擄C
Thermal Resistance,
Junction鈭抰o鈭扐mbient
Thermal Resistance,
Junction鈭抰o鈭扡ead #1
Total Device Dissipation
(Single Pulse < 10 sec)
Junction and Storage
Temperature Range
Symbol
P
D
(Note 1)
R
qJA
(Note 1)
P
D
(Note 2)
R
qJA
(Note 2)
R
qJL
P
Dsingle
(Notes 2 & 3)
T
J
, T
stg
Max
650
5.2
192
1.57
12.7
79
15
2.75
鈭?5 to
+150
Unit
mW
mW/擄C
擄C/W
W
mW/擄C
擄C/W
擄C/W
W
擄C
VS9 = Specific Device Code
M
= Month Code
G
= Pb鈭扚ree Package
(Note: Microdot may be in either location)
2
3
4
ORDERING INFORMATION
Device
NSS40400CF8T1G
Package
ChipFET
(Pb鈭扚ree)
Shipping
鈥?/div>
3000/
Tape & Reel
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR鈭? @ 100 mm
2
, 2 oz copper traces.
2. FR鈭? @ 500 mm
2
, 2 oz copper traces.
3. Thermal response.
鈥燜or information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
漏
Semiconductor Components Industries, LLC, 2006
1
January, 2006 鈭?Rev. 0
Publication Order Number:
NSS40400CF8/D
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3
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