音影先锋亚洲天堂网|电影世界尽头的爱完整版播放|国产 熟女 91|高清无码免费观看欧美日韩|韩国一区二区三区黄色录像|美女亚洲加勒比在线|亚洲综合网 开心五月|7x成人在线入口|成人网站免费日韩毛片区|国产黄片?一级?二级?三级

NSS35200CF8T1G Datasheet

  • NSS35200CF8T1G

  • High Current Surface Mount PNP Silicon Low VCE-SAT Switching...

  • 70.25KB

  • 6頁(yè)

  • ONSEMI

掃碼查看芯片數(shù)據(jù)手冊(cè)

上傳產(chǎn)品規(guī)格書(shū)

PDF預(yù)覽

NSS35200CF8T1G
High Current Surface Mount
PNP Silicon Low V
CE鈭扴AT
Switching Transistor for
Load Management in
Portable Applications
鈥?/div>
This is a Pb鈭扚ree Device
MAXIMUM RATINGS
(T
A
= 25擄C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current 鈭?Continuous
Collector Current 鈭?Peak
Electrostatic Discharge
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
CM
ESD
Max
鈭?5
鈭?5
鈭?.0
鈭?.0
鈭?.0
Unit
Vdc
Vdc
Vdc
Adc
A
4
BASE
5
EMITTER
ChipFET]
CASE 1206A
STYLE 4
http://onsemi.com
35 VOLTS
2.0 AMPS
PNP TRANSISTOR
COLLECTOR
1, 2, 3, 6, 7, 8
HBM Class 3
MM Class C
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
T
A
= 25擄C
Derate above 25擄C
Thermal Resistance,
Junction鈭抰o鈭扐mbient
Total Device Dissipation
T
A
= 25擄C
Derate above 25擄C
Thermal Resistance,
Junction鈭抰o鈭扐mbient
Thermal Resistance,
Junction鈭抰o鈭扡ead #1
Total Device Dissipation
(Single Pulse < 10 sec)
Junction and Storage
Temperature Range
Symbol
P
D
(Note 1)
Max
635
5.1
R
qJA
(Note 1)
P
D
(Note 2)
200
1.35
11
R
qJA
(Note 2)
R
qJL
P
Dsingle
(Notes 2 & 3)
T
J
, T
stg
90
15
2.75
鈭?5 to
+150
Unit
mW
mW/擄C
擄C/W
W
mW/擄C
擄C/W
擄C/W
W
擄C
C 8
C 7
C 6
E 5
1 C
2 C
3 C
4 B
PIN
CONNECTIONS
1
2
3
4
MARKING
DIAGRAM
8
7
6
5
G4
M
G4 = Specific Device Code
M = Month Code
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR鈭? @ 100 mm
2
, 1 oz copper traces.
2. FR鈭? @ 500 mm
2
, 1 oz copper traces.
3. Thermal response.
ORDERING INFORMATION
Device
NSS35200CF8T1G
Package
ChipFET
(Pb鈭扚ree)
Shipping
鈥?/div>
3000/
Tape & Reel
鈥燜or information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
漏
Semiconductor Components Industries, LLC, 2005
1
April, 2005 鈭?Rev. 2
Publication Order Number:
NSS35200CF8T1G/D

NSS35200CF8T1G 產(chǎn)品屬性

  • Low Vce(sat) BJT Power Savings

  • 3,000

  • 分離式半導(dǎo)體產(chǎn)品

  • 晶體管(BJT) - 單路

  • -

  • PNP

  • 2A

  • 35V

  • 300mV @ 20mA，2A

  • 100nA

  • 100 @ 1.5A，2V

  • 635mW

  • 100MHz

  • 表面貼裝

  • 8-SMD，扁平引線

  • ChipFET?

  • 帶卷 (TR)

  • NSS35200CF8T1G-ND

NSS35200CF8T1G相關(guān)型號(hào)PDF文件下載

掃碼下載APP，
一鍵連接廣大的電子世界。

在線人工客服

買(mǎi)家服務(wù)：
賣(mài)家服務(wù)：
技術(shù)客服：

0571-85317607

網(wǎng)站技術(shù)支持

13606545031

客服在線時(shí)間周一至周五
9:00-17:30

關(guān)注官方微信號(hào)，
第一時(shí)間獲取資訊。

建議反饋

聯(lián)系人：

聯(lián)系方式：

按住滑塊，拖拽到最右邊
>>
感謝您向阿庫(kù)提出的寶貴意見(jiàn)，您的參與是維庫(kù)提升服務(wù)的動(dòng)力！意見(jiàn)一經(jīng)采納，將有感恩紅包奉上哦！