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NSS30101LT1G Datasheet

  • NSS30101LT1G

  • 30 V, 2 A, Low VCE(sat) NPN Transistor

  • 61.49KB

  • 4頁(yè)

  • ONSEMI

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NSS30101LT1G
30 V, 2 A, Low V
CE(sat)
NPN Transistor
ON Semiconductor鈥檚 e
2
PowerEdge family of low V
CE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (V
CE(sat)
) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical application are DC鈭扗C converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e
2
PowerEdge devices to be
driven directly from PMU鈥檚 control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
http://onsemi.com
30 VOLTS
2.0 AMPS
NPN LOW V
CE(sat)
TRANSISTOR
EQUIVALENT R
DS(on)
100 mW
COLLECTOR
3
1
BASE
鈥?/div>
This is a Pb鈭扚ree Device
MAXIMUM RATINGS
(T
A
= 25擄C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current 鈭?Continuous
Collector Current 鈭?Peak
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
CM
Max
30
50
5.0
1.0
2.0
Unit
Vdc
Vdc
Vdc
A
A
2
EMITTER
3
1
2
SOT鈭?3 (TO鈭?36)
CASE 318
STYLE 6
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
T
A
= 25擄C
Derate above 25擄C
Thermal Resistance,
Junction to Ambient
Total Device Dissipation
T
A
= 25擄C
Derate above 25擄C
Thermal Resistance,
Junction to Ambient
Total Device Dissipation
(Single Pulse < 10 sec.)
Junction and Storage
Temperature Range
Symbol
P
D
(Note 1)
Max
310
2.5
R
胃JA
(Note 1)
P
D
(Note 2)
403
710
5.7
R
胃JA
(Note 2)
P
Dsingle
T
J
, T
stg
176
575
鈭?5 to
+150
Unit
mW
mW/擄C
擄C/W
mW
mW/擄C
擄C/W
mW
擄C
1
DEVICE MARKING
3
VS6
2
VS6 = Specific Device Code
ORDERING INFORMATION
Device
NSS30101LT1G
Package
SOT鈭?3
(Pb鈭扚ree)
Shipping
鈥?/div>
3000/Tape & Reel
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR鈭? @ Minimum Pad.
2. FR鈭? @ 1.0 X 1.0 inch Pad.
鈥燜or information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Semiconductor Components Industries, LLC, 2005
1
June, 2005 鈭?Rev. 0
Publication Order Number:
NSS30101L/D

NSS30101LT1G 產(chǎn)品屬性

  • 3,000

  • 分離式半導(dǎo)體產(chǎn)品

  • 晶體管(BJT) - 單路

  • -

  • NPN

  • 1A

  • 30V

  • 200mV @ 100mA,1A

  • 100nA

  • 300 @ 500mA,5V

  • 310mW

  • 100MHz

  • 表面貼裝

  • TO-236-3,SC-59,SOT-23-3

  • SOT-23-3(TO-236)

  • 帶卷 (TR)

  • NSS30101LT1G-NDNSS30101LT1GOSTR

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