NSS12600CF8T1G
12 V, 6.0 A, Low V
CE(sat)
PNP Transistor
ON Semiconductor鈥檚 e
2
PowerEdge family of low V
CE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (V
CE(sat)
) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical applications are DC鈭扗C converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e
2
PowerEdge devices to be
driven directly from PMU鈥檚 control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
鈥?/div>
This is a Pb鈭扚ree Device
MAXIMUM RATINGS
(T
A
= 25擄C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
鈭?/div>
Continuous
Collector Current
鈭?/div>
Peak
Electrostatic Discharge
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
CM
ESD
Max
鈭?2
鈭?2
鈭?.0
鈭?.0
鈭?.0
Unit
Vdc
Vdc
Vdc
Adc
A
http://onsemi.com
鈭?2
VOLTS, 6.0 AMPS
PNP LOW V
CE(sat)
TRANSISTOR
EQUIVALENT R
DS(on)
45 mW
COLLECTOR
1, 2, 3, 6, 7, 8
4
BASE
5
EMITTER
ChipFET]
CASE 1206A
STYLE 4
HBM Class 3B
MM Class C
MARKING DIAGRAM
VE M
G
VE = Specific Device Code
M = Date Code
G
= Pb鈭扚ree Package
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation, T
A
= 25擄C
Derate above 25擄C
Thermal Resistance,
Junction鈭抰o鈭扐mbient
Total Device Dissipation, T
A
= 25擄C
Derate above 25擄C
Thermal Resistance,
Junction鈭抰o鈭扐mbient
Thermal Resistance,
Junction鈭抰o鈭扡ead #1
Total Device Dissipation
(Single Pulse < 10 sec)
Junction and Storage
Temperature Range
Symbol
P
D
(Note 1)
R
qJA
(Note 1)
P
D
(Note 2)
R
qJA
(Note 2)
R
qJL
(Note 2)
P
Dsingle
(Notes 2 & 3)
T
J
, T
stg
Max
830
6.7
150
1.4
11.1
90
15
2.75
鈭?5
to
+150
Unit
mW
mW/擄C
擄C/W
W
mW/擄C
擄C/W
擄C/W
W
擄C
PIN
CONNECTIONS
C 8
C 7
C 6
E 5
1 C
2 C
3 C
4 B
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR鈭? @ 100 mm
2
, 1 oz copper traces.
2. FR鈭? @ 500 mm
2
, 1 oz copper traces.
3. Thermal response.
ORDERING INFORMATION
Device
NSS12600CF8T1G
Package
ChipFET
(Pb鈭扚ree)
Shipping
鈥?/div>
3000/
Tape & Reel
鈥燜or information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
漏
Semiconductor Components Industries, LLC, 2006
September, 2006
鈭?/div>
Rev. 0
1
Publication Order Number:
NSS12600CF8/D
NSS12600CF8T1G 產(chǎn)品屬性
3,000
分離式半導(dǎo)體產(chǎn)品
晶體管(BJT) - 單路
-
PNP
5A
12V
170mV @ 400mA，4A
-
250 @ 1A，2V
830mW
100MHz
表面貼裝
8-SMD，扁平引線
ChipFET?
帶卷 (TR)
NSS12600CF8T1G相關(guān)型號(hào)PDF文件下載
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型號(hào)
版本
描述
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