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NSDEMP11XV6T1 Datasheet

  • NSDEMP11XV6T1

  • Common Anode Quad Array Switching Diode

  • 53.12KB

  • 4頁(yè)

  • ONSEMI

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NSDEMP11XV6T1,
NSDEMP11XV6T5
Common Anode Quad
Array Switching Diode
These Common Anode Epitaxial Planar QUAD Diodes are
designed for use in ultra high speed switching applications. The
NSDEMP11XV6T1 device is housed in the SOT-563 package which
is designed for low power surface mount applications, where board
space is at a premium.
鈥?/div>
Fast t
rr
鈥?/div>
Low C
D
鈥?/div>
Available in 8 mm; 7 inch Tape and Reel
MAXIMUM RATINGS
(T
A
= 25擄C)
Rating
Reverse Voltage
Peak Reverse Voltage
Forward Current
Peak Forward Current
Peak Forward Surge Current
1. t = 1
mS
Symbol
V
R
V
RM
I
F
I
FM
I
FSM
(Note 1)
Value
80
80
100
300
2.0
Unit
Vdc
Vdc
mAdc
mAdc
Adc
6
54
2
3
http://onsemi.com
(3)
(2)
(1)
(4)
(5)
(6)
MARKING
DIAGRAM
1
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Total Device Dissipation
Derate above 25擄C
Thermal Resistance Junction-to-Ambient
Characteristic
(Both Junctions Heated)
Total Device Dissipation
Derate above 25擄C
Thermal Resistance Junction-to-Ambient
Junction and Storage Temperature
2. FR-4 @ Minimum Pad
R
qJA
T
J
, T
stg
T
A
= 25擄C
R
qJA
T
A
= 25擄C
Symbol
P
D
Max
357
(Note 2)
2.9
(Note 2)
350
(Note 2)
Max
500
(Note 2)
4.0
(Note 2)
250
(Note 2)
- 55 to
+150
Unit
mW
mW/擄C
擄C/W
SOT-563
CASE 463A
PLASTIC
P9 D
P9 = Specific Device Code
D = Date Code
ORDERING INFORMATION
Device
Package
SOT-563
SOT-563
Shipping
4 mm pitch
4000/Tape & Reel
2 mm pitch
8000/Tape & Reel
Symbol
P
D
Unit
mW
mW/擄C
擄C/W
擄C
NSDEMP11XV6T1
NSDEMP11XV6T5
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C)
Characteristic
Reverse Voltage Leakage Current
Forward Voltage
Reverse Breakdown Voltage
Diode Capacitance
Reverse Recovery Time
Symbol
I
R
V
F
V
R
C
D
t
rr
(Note 2)
Condition
V
R
= 70 V
I
F
= 100 mA
I
R
= 100
mA
V
R
= 6.0 V, f = 1.0 MHz
I
F
= 5.0 mA, V
R
= 6.0 V, R
L
= 100
W,
I
rr
= 0.1 I
R
Min
-
-
-0
-
-
Max
0.1
1.2
鈥?/div>
3.5
4.0
Unit
mAdc
Vdc
Vdc
pF
ns
3. t
rr
Test Circuit for NSDEMP11XV6T1 in Figure 4.
漏
Semiconductor Components Industries, LLC, 2003
1
February, 2003 - Rev. 1
Publication Order Number:
NSDEMP11XV6T1/D

NSDEMP11XV6T1 產(chǎn)品屬性

  • 10

  • 分離式半導(dǎo)體產(chǎn)品

  • 二極管，整流器 - 陣列

  • -

  • 1.2V @ 100mA

  • 100nA @ 70V

  • 100mA（DC）

  • 80V

  • 4ns

  • 標(biāo)準(zhǔn)

  • 小信號(hào) =

  • 2 對(duì)共陽(yáng)極

  • 表面貼裝

  • SOT-563，SOT-666

  • SOT-563

  • 剪切帶 (CT)

  • SMSIGDIODEA-KIT-ND - KIT SMALL SIGNAL DIODE DESIGN

  • NSDEMP11XV6T1OSCT

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