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NSDEMN11XV6T1 Datasheet

  • NSDEMN11XV6T1

  • Common Cathode Quad Array Switching Diode

  • 6頁

  • ONSEMI

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NSDEMN11XV6T1,
NSDEMN11XV6T5
Common Cathode Quad
Array Switching Diode
This Common Cathode Epitaxial Planar Quad Diode is designed for
use in ultra high speed switching applications. This device is housed in
the SOT-563 package which is designed for low power surface mount
applications, where board space is at a premium.
http://onsemi.com
(3)
(2)
(1)
鈥?/div>
Fast t
rr
鈥?/div>
Low C
D
鈥?/div>
Available in 8 mm; 7 Inch Tape and Reel
MAXIMUM RATINGS
(T
A
= 25擄C)
Rating
Reverse Voltage
Peak Reverse Voltage
Forward Current
Peak Forward Current
Peak Forward Surge Current
1. t = 1
mS
Symbol
V
R
V
RM
I
F
I
FM
I
FSM
(Note 1)
Value
80
80
100
300
2.0
Unit
Vdc
Vdc
mAdc
mAdc
Adc
(4)
(5)
(6)
6
54
2
3
MARKING
DIAGRAM
1
SOT-563
CASE 463A
PLASTIC
N9 D
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Total Device Dissipation
Derate above 25擄C
Thermal Resistance Junction-to-Ambient
Characteristic
(Both Junctions Heated)
Total Device Dissipation
Derate above 25擄C
Thermal Resistance Junction-to-Ambient
Junction and Storage Temperature
2. FR-4 @ Minimum Pad
R
qJA
T
J
, T
stg
T
A
= 25擄C
R
qJA
T
A
= 25擄C
Symbol
P
D
Max
357
(Note 2)
2.9
(Note 2)
350
(Note 2)
Max
500
(Note 2)
4.0
(Note 2)
250
(Note 2)
- 55 to
+150
Unit
mW
N9 = Specific Device Code
D = Date Code
ORDERING INFORMATION
mW/擄C
Device
擄C/W
NSDEMN11XV6T1
NSDEMN11XV6T5
Package
SOT-563
SOT-563
Shipping
4 mm pitch
4000/Tape & Reel
2 mm pitch
8000/Tape & Reel
Symbol
P
D
Unit
mW
mW/擄C
擄C/W
擄C
漏
Semiconductor Components Industries, LLC, 2003
1
February, 2003 - Rev. 1
Publication Order Number:
NSDEMN11XV6T1/D

NSDEMN11XV6T1 產(chǎn)品屬性

  • 10

  • 分離式半導體產(chǎn)品

  • 二極管，整流器 - 陣列

  • -

  • 1.2V @ 100mA

  • 100nA @ 70V

  • 100mA（DC）

  • 80V

  • 4ns

  • 標準

  • 小信號 =

  • 2 對共陰極

  • 表面貼裝

  • SOT-563，SOT-666

  • SOT-563

  • 剪切帶 (CT)

  • SMSIGDIODEA-KIT-ND - KIT SMALL SIGNAL DIODE DESIGN

  • NSDEMN11XV6T1OSCT

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