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NSB1706DMW5T1 Datasheet

  • NSB1706DMW5T1

  • Dual Bias Resistor Transistor

  • 50.21KB

  • 3頁

  • ONSEMI

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NSB1706DMW5T1
Dual Bias Resistor
Transistor
NPN Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with
a monolithic bias network consisting of two resistors; a series base
resistor and a base鈭抏mitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the NSB1706DMW5T1, two
BRT devices are housed in the SC鈭?8A package which is ideal for low
power surface mount applications where board space is at a premium.
Features
http://onsemi.com
(5)
(4)
Q1
R2
R1
(1)
(2)
Q2
R2
R1
(3)
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Pb鈭扚ree Package is Available
MAXIMUM RATINGS
(T
A
= 25擄C unless otherwise noted, common for Q
1
and Q
2
)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Symbol
V
CBO
V
CEO
I
C
Value
50
50
100
Unit
Vdc
Vdc
mAdc
1
SC鈭?8A
CASE 419A
STYLE 1
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Total Device Dissipation
T
A
= 25擄C
Derate above 25擄C
Thermal Resistance, Junction-to-Ambient
Characteristic
(Both Junctions Heated)
Total Device Dissipation
T
A
= 25擄C
Derate above 25擄C
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Lead
Junction and Storage Temperature
Symbol
P
D
Max
187 (Note 1)
256 (Note 2)
1.5 (Note 1)
2.0 (Note 2)
670 (Note 1)
490 (Note 2)
Max
250 (Note 1)
385 (Note 2)
2.0 (Note 1)
3.0 (Note 2)
493 (Note 1)
325 (Note 2)
188 (Note 1)
208 (Note 2)
鈭?5 to +150
Unit
mW
mW/擄C
擄C/W
MARKING DIAGRAM
R
qJA
U6 M
G
G
1
Symbol
P
D
Unit
mW
mW/擄C
擄C/W
擄C/W
擄C
U6 = Device Marking
M = Date Code
G
= Pb鈭扚ree Package
(Note: Microdot may be in either location)
R
qJA
R
qJL
T
J
, T
stg
ORDERING INFORMATION
Device
NSB1706DMW5T1
NSB1706DMW5T1G
Package
Shipping
鈥?/div>
SC鈭?8A 3000/Tape & Reel
SC鈭?8A 3000/Tape & Reel
(Pb鈭扚ree)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR鈭? @ Minimum Pad.
2. FR鈭? @ 1.0 x 1.0 inch Pad.
Semiconductor Components Industries, LLC, 2006
鈥燜or information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NSB1706DMW5T1/D
1
May, 2006 鈭?Rev. 3

NSB1706DMW5T1 產(chǎn)品屬性

  • 3,000

  • 分離式半導體產(chǎn)品

  • 晶體管(BJT) - 陣列﹐預偏壓式

  • -

  • 2 個 NPN 預偏壓式(雙)

  • 100mA

  • 50V

  • 4.7k

  • 47k

  • 80 @ 5mA,10V

  • 250mV @ 1mA,10mA

  • 500nA

  • -

  • 250mW

  • 表面貼裝

  • 6-TSSOP(5 引線),SC-88A,SOT-353

  • SC-70

  • 帶卷 (TR)

  • NSB1706DMW5T1OS

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