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NM93C56LZVM8 Datasheet

  • NM93C56LZVM8

  • 256-/1024-/2048-/4096-Bit Serial EEPROM with Zero Power and ...

  • 12頁(yè)

  • NSC

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NM93C06LZ C46LZ C56LZ C66LZ 256- 1024- 2048- 4096-Bit Serial EEPROM with Zero Power
and Extended Voltage (2 7V to 5 5V) (MICROWIRE Bus Interface)
September 1996
NM93C06LZ C46LZ C56LZ C66LZ
256- 1024- 2048- 4096-Bit Serial EEPROM with Zero
Power and Extended Voltage (2 7V to 5 5V)
(MICROWIRE
TM
Bus Interface)
General Description
The NM93C06LZ C46LZ C56LZ C66LZ devices are 256
1024 2048 4096 bits respectively of CMOS non-volatile
electrically erasable memory divided into 16 64 128 256
16-bit registers They are fabricated using National Semi-
conductor鈥檚 floating-gate CMOS process for high reliability
and low power consumption These memory devices are
available in both SO and TSSOP packages for small space
considerations
The serial interface that operates these EEPROMs is MI-
CROWIRE compatible for simple interface to standard mi-
crocontrollers and microprocessors There are 7 instruc-
tions that control these devices Read Erase Write Enable
Erase Erase All Write Write All and Erase Write Disable
The ready busy status is available on the DO pin to indicate
the completion of a programming cycle
Features
Y
Y
Y
Y
Y
Y
Y
Y
Y
Y
Y
Less than 1 0
mA
standby current
2 7V鈥? 5V operation in all modes
Typical active current of 100
mA
Direct write no erase before program
Reliable CMOS floating gate technology
MICROWIRE compatible serial I O
Self-timed programming cycle
Device status indication during programming mode
40 years data retention
Endurance 10
6
data changes
Packages available 8-pin SO 8-pin DIP 8-pin TSSOP
Block Diagram
TL D 11778 鈥?1
TRI-STATE is a registered trademark of National Semiconductor Corporation
MICROWIRE
TM
is a trademark of National Semiconductor Corporation
C
1996 National Semiconductor Corporation
TL D 11778
RRD-B30M96 Printed in U S A
http
www national com

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