鈥?/div>
High Current-Gain - Bandwidth Product -
f
T
= 65 MHz (Min) @ I
C
= 100 mA
http://onsemi.com
SILICON
POWER TRANSISTORS
2 A, 50 V, 12.5 W
MINIMUM PAD SIZES
RECOMMENDED FOR
SURFACE MOUNTED
APPLICATIONS
0.190
4.826
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MAXIMUM RATINGS
Rating
Symbol
V
CB
Value
50
50
5
2
3
Unit
Vdc
Vdc
Vdc
Adc
Adc
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
V
CEO
V
EB
I
C
I
B
Continuous
Peak
0.4
Total Device Dissipation @ T
C
= 25擄C
Derate above 25擄C
P
D
P
D
12.5
0.1
W
W/擄C
W
W/擄C
擄C
Total Device Dissipation @ T
A
= 25擄C*
Derate above 25擄C
Operating and Storage Junction
Temperature Range
1.4
0.011
T
J
, T
stg
- 65 to
+ 150
Characteristic
Symbol
R
qJC
R
qJA
Max
Unit
Thermal Resistance
Junction to Case
Junction to Ambient*
10
89.3
擄C/W
0.243
6.172
THERMAL CHARACTERISTICS
0.063
1.6
inches
mm
*When surface mounted on minimum pad sizes recommended.
DPAK
CASE 369A
xxxxxxxxx
Y
WW
= Specific Device Code
= Year
= Work Week
ORDERING INFORMATION
Device
NJD2873T4
Package
DPAK
Shipping
2500 Units / Reel
漏
Semiconductor Components Industries, LLC, 2003
1
May, 2003 - Rev. 0
Publication Order Number:
NJD2873T4/D
0.118
3.0
0.100
2.54
0.165
4.191
MARKING
DIAGRAM
YWW
xxxxxxxx
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2
3
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