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NIMD6302R2/D Datasheet

  • NIMD6302R2/D

  • HDPlus Dual N-Channel Self-Protected Field Effect Transistor...

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NIMD6302R2
Product Preview
SMARTDISCRETESt
5 Amps, 30 Volts
Self Protected with Current Sense
N鈥揅hannel SO鈥?, Dual
SMARTDISCRETES devices are an advanced series of Power
MOSFETs which utilize ON Semiconductor鈥檚 latest MOSFET
technology process to achieve the lowest possible on鈥搑esistance per
silicon area while incorporating smart features. They are capable of
withstanding high energy in the avalanche and commutation modes.
The avalanche energy is specified to eliminate guesswork in designs
where inductive loads are switched and offer additional safety margin
against unexpected voltage transients.
This new SMARTDISCRETES device features an integrated
Gate鈥搕o鈥揝ource clamp for ESD protection. Also, this device features a
sense FET for current monitoring.
鈥?/div>
Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery
Life
鈥?/div>
IDSS Specified at Elevated Temperature
鈥?/div>
Avalanche Energy Specified
鈥?/div>
Current Sense FET
鈥?/div>
ESD Protected, Main FET and SENSEFET
ABSOLUTE MAXIMUM RATINGS
Stresses beyond those listed may cause permanent damage to the device.
These are stress ratings only and functional operation of the device at these
or any other conditions beyond those indicated in this specification is not
implied. Exposure to absolute maximum rated conditions for extended peri-
ods may affect device reliability.
SOIC鈥?
CASE 751
STYLE 19
http://onsemi.com
5.0 AMPERES
30 VOLTS
RDS(on) = 50 m鈩?/div>
Drain
Gate
Sense
Main FET
Source
Sense
Source
Main
MARKING DIAGRAM
Source 1
Gate 1
Source 2
Gate 2
1
2
3
4
(Top View)
TBD
= Specific Device Code
TBD
8
7
6
5
Mirror 1
Drain 1
Mirror 2
Drain 2
MAIN MOSFET MAXIMUM RATINGS
(TJ = 25擄C unless otherwise noted)
Rating
Drain鈥搕o鈥揝ource Voltage
Drain鈥搕o鈥揋ate Voltage
(RGS = 1.0 MW)
Gate鈥搕o鈥揝ource Voltage
Single Pulse Drain鈥搕o鈥揝ource
Avalanche Energy (Note 1.)
(VDD = 25 Vdc, VGS = 10 Vdc,
VDS = 20 Vdc, IL = 15 Apk,
L = 10 mH, RG = 25
鈩?
Drain Current
鈥?Continuous @ TA = 25擄C
鈥?Continuous @ TA = 100擄C (Note 1.)
鈥?Single Pulse (tp
v10
碌s)
Symbol
VDSS
VDGR
VGS
EAS
Value
30
30
"16
250
Unit
Vdc
Vdc
Vdc
mJ
ORDERING INFORMATION
Device
NIMD6302R2
Package
SOIC鈥?
Shipping
TBD
ID
6.5
Adc
ID
4.4
Adc
IDM
33
Apk
Maximum Power Dissipation (TA = 25擄C)
PD
TBD
W
1. Switching characteristics are independent of operating junction temperatures
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
漏
Semiconductor Components Industries, LLC, 2001
1
February, 2001 鈥?Rev. 1
Publication Order Number:
NIMD6302R2/D

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