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NIF62514T1 Datasheet

  • NIF62514T1

  • Self-protected FET with Temperature and Current Limit

  • 6頁

  • ONSEMI

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NIF62514
Preferred Device
Self鈭抪rotected FET
with Temperature and
Current Limit
HDPlus devices are an advanced series of power MOSFETs which
utilize ON Semiconductor鈥檚 latest MOSFET technology process to
achieve the lowest possible on-resistance per silicon area while
incorporating smart features. Integrated thermal and current limits
work together to provide short circuit protection. The devices feature
an integrated Drain-to-Gate Clamp that enables them to withstand
high energy in the avalanche mode. The Clamp also provides
additional safety margin against unexpected voltage transients.
Electrostatic Discharge (ESD) protection is provided by an integrated
Gate-to-Source Clamp.
Features
http://onsemi.com
6.0 AMPERES*
40 VOLTS CLAMPED
R
DS(on)
= 90 mW
Drain
Overvoltage
Protection
M
PWR
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Current Limitation
Thermal Shutdown with Automatic Restart
Short Circuit Protection
Low R
DS(on)
I
DSS
Specified at Elevated Temperature
Avalanche Energy Specified
Slew Rate Control for Low Noise Switching
Overvoltage Clamped Protection
Gate
Input
R
G
ESD Protection
Temperature
Limit
Current
Limit
Current
Sense
Source
MOSFET MAXIMUM RATINGS
(T
J
= 25擄C unless otherwise noted)
Rating
Drain-to-Source Voltage Internally Clamped
Drain-to-Gate Voltage Internally Clamped
(R
GS
= 1.0 MW)
Gate-to-Source Voltage
Drain Current
- Continuous @ T
A
= 25擄C
- Continuous @ T
A
= 100擄C
- Pulsed (t
p
鈮?/div>
10
ms)
@ T
A
= 25擄C (Note 1)
@ T
A
= 25擄C (Note 2)
@ T
A
= 25擄C (Note 3)
Symbol
V
DSS
V
DGR
V
GS
I
D
I
D
I
DM
P
D
1.1
1.73
8.93
14
114
72.3
300
W
(Top View)
擄C/W
62514
L
WW
= Specific Device Code
= Location Code
= Work Week
Value
40
40
"16
Unit
Vdc
Vdc
Vdc
SOT-223
CASE 318E
STYLE 3
MARKING DIAGRAM
1
GATE
2
DRAIN
3
SOURCE
62514
LWW
4
DRAIN
Internally Limited
Total Power Dissipation
Thermal Resistance
- Junction-to-Tab
Junction-to-Ambient (Note 1)
Junction-to-Ambient (Note 2)
Single Pulse Drain- to- Source Avalanche Energy
(V
DD
= 25 Vdc, V
GS
= 5.0 Vdc,
V
DS
= 40 Vdc, I
L
= 2.8 Apk, L = 80 mH,
R
G
= 25
W)
Operating and Storage Temperature Range
1. Mounted onto min pad board.
2. Mounted onto 1鈥?pad board.
3. Mounted onto large heatsink.
R
qJT
R
qJA
R
qJA
E
AS
mJ
ORDERING INFORMATION
Device
Package
SOT-223
SOT-223
Shipping
1000/Tape & Reel
4000/Tape & Reel
T
J
, T
stg
-55 to
150
擄C
NIF62514T1
NIF62514T3
*Limited by the current limit circuit.
Preferred
devices are recommended choices for future use
and best overall value.
漏
Semiconductor Components Industries, LLC, 2003
1
April, 2003 - Rev. 3
Publication Order Number:
NIF62514/D

NIF62514T1 產(chǎn)品屬性

  • 1,000

  • 集成電路 (IC)

  • PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 內(nèi)部開關(guān)

  • HDPlus™

  • 低端

  • 非反相

  • 1

  • 90 毫歐

  • -

  • 6A

  • -

  • -55°C ~ 150°C

  • 表面貼裝

  • TO-261-4，TO-261AA

  • SOT-223

  • 帶卷 (TR)

  • NIF62514T1OSNIF62514T1OS-NDNIF62514T1OSTR

NIF62514T1相關(guān)型號(hào)PDF文件下載

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  • 英文版
    Self-protected FET with Temperature and Current Limit
    ONSEMI
  • 英文版
    Self-protected FET with Temperature and Current Limit
    ONSEMI [ON...
  • 英文版
    Self-protected FET, Temp and Current Limit, Voltage Clamp, E...
    ON Semiconductor
  • 英文版
    Self-protected FET with Temperature and Current Limit
    ONSEMI
  • 英文版
    Self-protected FET with Temperature and Current Limit
    ONSEMI [ON...
  • 英文版
    Self-protected FET with Temperature and Current Limit
    ONSEMI
  • 英文版
    Self-protected FET with Temperature and Current Limit
    ONSEMI [ON...
  • 英文版
    Self−protected FET with Temperature and Current Limit
    ONSEMI [ON Semi...
  • 英文版
    Self−protected FET with Temperature and Current Limit
    ONSEMI [ON Semi...

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