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NID6002NT4 Datasheet

  • NID6002NT4

  • Self−Protected FET with Temperature and Current Limit

  • 6頁

  • ONSEMI

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NID6002N
Preferred Device
Self鈭扨rotected FET
with Temperature and
Current Limit
65 V, 6.5 A, Single N鈭扖hannel, DPAK
http://onsemi.com
HDPlus鈩?devices are an advanced series of power MOSFETs
which utilize ON Semiconductor鈥檚 latest MOSFET technology
process to achieve the lowest possible on鈭抮esistance per silicon area
while incorporating smart features. Integrated thermal and current
limits work together to provide short circuit protection. The devices
feature an integrated Drain鈭抰o鈭扜ate Clamp that enables them to
withstand high energy in the avalanche mode. The Clamp also
provides additional safety margin against unexpected voltage
transients. Electrostatic Discharge (ESD) protection is provided by an
integrated Gate鈭抰o鈭扴ource Clamp.
Features
V
DSS
(Clamped)
65 V
R
DS(on)
TYP
210 mW
I
D
TYP
(Limited)
6.5 A
Drain
Overvoltage
Protection
M
PWR
Gate
Input
R
G
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Short Circuit Protection/Current Limit
Thermal Shutdown with Automatic Restart
I
DSS
Specified at Elevated Temperature
Avalanche Energy Specified
Slew Rate Control for Low Noise Switching
Overvoltage Clamped Protection
Pb鈭扚ree Package is Available
ESD Protection
Temperature
Limit
Current
Limit
Current
Sense
Source
MARKING
DIAGRAM
1
DPAK
CASE 369C
STYLE 2
D6002N
Y
WW
G
= Device Code
= Year
= Work Week
= Pb鈭扚ree Device
2
3
YYW
D6
002NG
1 = Gate
2 = Drain
3 = Source
ORDERING INFORMATION
Device
NID6002NT4
NID6002NT4G
Package
DPAK
DPAK
(Pb鈭扚ree)
Shipping
鈥?/div>
2500/Tape & Reel
2500/Tape & Reel
鈥燜or information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Preferred
devices are recommended choices for future use
and best overall value.
Semiconductor Components Industries, LLC, 2006
1
January, 2006 鈭?Rev. 4
Publication Order Number:
NID6002N/D

NID6002NT4 產(chǎn)品屬性

  • 2,500

  • 集成電路 (IC)

  • PMIC - MOSFET,電橋驅(qū)動(dòng)器 - 內(nèi)部開關(guān)

  • HDPlus™

  • 低端

  • 非反相

  • 1

  • 185 毫歐

  • -

  • 6.5A

  • -

  • -55°C ~ 150°C

  • 表面貼裝

  • TO-252-3,DPak(2 引線+接片),SC-63

  • DPAK-3

  • 帶卷 (TR)

NID6002NT4相關(guān)型號(hào)PDF文件下載

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  • 英文版
    Self−Protected FET with Temperature and Current Limit
    ONSEMI
  • 英文版
    Self−Protected FET with Temperature and Current Limit
    ONSEMI [ON Semi...
  • 英文版
    Self-Protected FET with Temperature and Current Limit 65 V, ...
    ON Semiconductor
  • 英文版
    Self−Protected FET with Temperature and Current Limit
    ONSEMI
  • 英文版
    Self−Protected FET with Temperature and Current Limit
    ONSEMI [ON Semi...
  • 英文版
    Self−Protected FET with Temperature and Current Limit
    ONSEMI
  • 英文版
    Self−Protected FET with Temperature and Current Limit
    ONSEMI [ON Semi...

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