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NID5004NT4G Datasheet

  • NID5004NT4G

  • Self−Protected FET with Temperature and Current Limit

  • 6頁

  • ONSEMI

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NID5004N
Self鈭扨rotected FET
with Temperature and
Current Limit
40 V, 6.5 A, Single N鈭扖hannel, DPAK
Self鈥損rotected FETs are a series of power MOSFETs which utilize
ON Semiconductor HDPlust technology. The self鈥損rotected
MOSFET incorporates protection features such as integrated thermal
and current limits. The self鈭抪rotected MOSFETs include an integrated
Drain鈭抰o鈭扜ate Clamp that provides overvoltage protection from
transients and avalanche. The device is protected from Electrostatic
Discharge (ESD) by utilizing an integrated Gate鈭抰o鈭扴ource Clamp.
Features
V
DSS
(Clamped)
40 V
http://onsemi.com
I
D
Typ
(Limited)
6.5 A
Drain
Overvoltage
Protection
R
DS(on)
Typ
110 mW @ 10 V
鈥?/div>
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Short Circuit Protection
In Rush Current Limit
Thermal Shutdown with Automatic Restart
Avalanche Rated
Overvoltage Protection
ESD Protection (4 kV HBM)
Controlled Slew Rate for Low Noise Switching
AEC Q101 Qualified
This is a Pb鈭扚ree Device
Gate
Input
R
G
ESD Protection
Temperature
Limit
Current
Limit
Current
Sense
Source
Applications
MARKING
DIAGRAM
DPAK
CASE 369C
STYLE 2
D5004N = Device Code
Y
= Year
WW
= Work Week
G
= Pb鈭扚ree Device
1
2
3
YYW
D5
004NG
Solenoid Driver
Relay Driver
Small Motors
Lighting
Relay Replacement
Load Switching
1 = Gate
2 = Drain
3 = Source
ORDERING INFORMATION
Device
NID5004NT4G
Package
DPAK
(Pb鈭扚ree)
Shipping
鈥?/div>
2500/Tape & Reel
鈥燜or information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Semiconductor Components Industries, LLC, 2006
April, 2006
鈭?/div>
Rev. 1
1
Publication Order Number:
NID5004N/D

NID5004NT4G 產(chǎn)品屬性

  • 2,500

  • 集成電路 (IC)

  • PMIC - MOSFET,電橋驅(qū)動(dòng)器 - 內(nèi)部開關(guān)

  • HDPlus™

  • 低端

  • 非反相

  • 1

  • 110 毫歐

  • -

  • 6.5A

  • -

  • -55°C ~ 150°C

  • 表面貼裝

  • TO-252-3,DPak(2 引線+接片),SC-63

  • DPAK-3

  • 帶卷 (TR)

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