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NID5001NT4 Datasheet

  • NID5001NT4

  • Self-protected FET with Temperature and Current Limit

  • 57.46KB

  • 6頁(yè)

  • ONSEMI

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NID5001N
Preferred Device
Self鈭抪rotected FET
with Temperature and
Current Limit
HDPlus devices are an advanced series of power MOSFETs which
utilize ON Semicondutor鈥檚 latest MOSFET technology process to
achieve the lowest possible on鈭抮esistance per silicon area while
incorporating smart features. Integrated thermal and current limits
work together to provide short circuit protection. The devices feature
an integrated Drain鈭抰o鈭扜ate Clamp that enables them to withstand
high energy in the avalanche mode. The Clamp also provides
additional safety margin against unexpected voltage transients.
Electrostatic Discharge (ESD) protection is provided by an integrated
Gate鈭抰o鈭扴ource Clamp.
Features
http://onsemi.com
V
DSS
(Clamped)
42 V
I
D
MAX
(Limited)
33 A*
R
DS(ON)
TYP
23 m鈩?@ 10 V
Drain
Overvoltage
Protection
M
PWR
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Low R
DS(on)
Current Limitation
Thermal Shutdown with Automatic Restart
Short Circuit Protection
I
DSS
Specified at Elevated Temperature
Avalanche Energy Specified
Slew Rate Control for Low Noise Switching
Overvoltage Clamped Protection
Gate
Input
R
G
ESD Protection
Temperature
Limit
Current
Limit
Current
Sense
Source
MOSFET MAXIMUM RATINGS
(T
J
= 25擄C unless otherwise noted)
Rating
Drain鈭抰o鈭扴ource Voltage Internally
Clamped
Drain鈭抰o鈭扜ate Voltage Internally Clamped
(R
GS
= 1.0 MW)
Gate鈭抰o鈭扴ource Voltage
Drain Current
Continuous
Symbol
V
DSS
V
DGR
V
GS
I
D
P
D
64
1.0
1.56
R
qJC
R
qJA
R
qJA
E
AS
1.95
120
80
1215
擄C/W
Value
42
42
"14
Unit
Vdc
Vdc
Vdc
NID5001N = Device Code
Y
= Year
WW
= Work Week
DPAK
CASE 369C
STYLE 2
1
2
3
MARKING
DIAGRAM
YWW
X
NID
5001N
Internally Limited
W
1 = Gate
2 = Drain
3 = Source
Total Power Dissipation
@ T
A
= 25擄C (Note 1)
@ T
A
= 25擄C (Note 1)
@ T
A
= 25擄C (Note 2)
Thermal Resistance 鈭?Junction鈭抰o鈭扖ase
Junction鈭抰o鈭扐mbient (Note 1)
Junction鈭抰o鈭扐mbient (Note 2)
Single Pulse Drain鈭抰o鈭扴ource Avalanche
Energy
(V
DD
= 25 Vdc, V
GS
= 5.0 Vdc,
I
L
= 4.5 Apk, L = 120 mH, R
G
= 25
W)
Operating and Storage Temperature
Range
ORDERING INFORMATION
Device
NID5001NT4
Package
DPAK
Shipping
鈥?/div>
2500/Tape & Reel
mJ
鈥燜or information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Preferred
devices are recommended choices for future use
and best overall value.
T
J
, T
stg
鈭?5 to
150
擄C
1. Minimum FR4 PCB, steady state.
2. Mounted onto a 2鈥?square FR4 board (1鈥?square, 2 oz. Cu 0.06鈥?thick
single鈭抯ided, t = steady state).
*Max current may be limited below this value
depending on input conditions.
漏
Semiconductor Components Industries, LLC, 2004
1
January, 2004 鈭?Rev. 6
Publication Order Number:
NID5001N/D

NID5001NT4 產(chǎn)品屬性

  • 2,500

  • 集成電路 (IC)

  • PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 內(nèi)部開關(guān)

  • HDPlus™

  • 低端

  • 非反相

  • 1

  • 23 毫歐

  • -

  • 33A

  • -

  • -55°C ~ 150°C

  • 表面貼裝

  • TO-252-3，DPak（2 引線+接片），SC-63

  • DPAK-3

  • 帶卷 (TR)

  • NID5001NT4OSNID5001NT4OS-NDNID5001NT4OSTR

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