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NID5001NT4G Datasheet

  • NID5001NT4G

  • Self−Protected FET with Temperature and Current Limit

  • 5頁

  • ONSEMI

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NID5001N
Self鈭扨rotected FET
with Temperature and
Current Limit
HDPlus devices are an advanced series of power MOSFETs which
utilize ON Semicondutor鈥檚 latest MOSFET technology process to
achieve the lowest possible on鈭抮esistance per silicon area while
incorporating smart features. Integrated thermal and current limits
work together to provide short circuit protection. The devices feature
an integrated Drain鈭抰o鈭扜ate Clamp that enables them to withstand
high energy in the avalanche mode. The Clamp also provides
additional safety margin against unexpected voltage transients.
Electrostatic Discharge (ESD) protection is provided by an integrated
Gate鈭抰o鈭扴ource Clamp.
Features
http://onsemi.com
V
DSS
(Clamped)
42 V
I
D
MAX
(Limited)
33 A*
R
DS(ON)
TYP
23 mW @ 10 V
*Max current may be limited below this value
depending on input conditions.
Drain
Overvoltage
Protection
M
PWR
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Low R
DS(on)
Current Limitation
Thermal Shutdown with Automatic Restart
Short Circuit Protection
I
DSS
Specified at Elevated Temperature
Avalanche Energy Specified
Slew Rate Control for Low Noise Switching
Overvoltage Clamped Protection
Pb鈭扚ree Package is Available
Gate
Input
R
G
ESD Protection
Temperature
Limit
Current
Limit
Current
Sense
Source
MAXIMUM RATINGS
(T
J
= 25擄C unless otherwise noted)
Rating
Drain鈭抰o鈭扴ource Voltage Internally Clamped
Drain鈭抰o鈭扜ate Voltage Internally Clamped
(R
GS
= 1.0 MW)
Gate鈭抰o鈭扴ource Voltage
Drain Current 鈭?Continuous
Total Power Dissipation
@ T
A
= 25擄C (Note 1)
@ T
A
= 25擄C (Note 1)
@ T
A
= 25擄C (Note 2)
Thermal Resistance, Junction鈭抰o鈭扖ase
Junction鈭抰o鈭扐mbient (Note 1)
Junction鈭抰o鈭扐mbient (Note 2)
Single Pulse Drain鈭抰o鈭扴ource Avalanche
Energy
(V
DD
= 25 Vdc, V
GS
= 5.0 Vdc,
I
L
= 4.5 Apk, L = 120 mH, R
G
= 25
W)
Operating and Storage Temperature Range
Symbol
V
DSS
V
DGR
V
GS
I
D
P
D
64
1.0
1.56
R
qJC
R
qJA
R
qJA
E
AS
1.95
120
80
1215
擄C/W
Value
42
42
"14
Unit
Vdc
Vdc
Vdc
DPAK
CASE 369C
STYLE 2
Y
WW
D5001N
G
= Year
= Work Week
= Device Code
= Pb鈭扚ree Package
1
2
3
YWW
D50
01NG
MARKING
DIAGRAM
Internally Limited
W
1 = Gate
2 = Drain
3 = Source
ORDERING INFORMATION
Device
Package
DPAK
DPAK
(Pb鈭扚ree)
Shipping
鈥?/div>
2500/Tape & Reel
2500/Tape & Reel
mJ
NID5001NT4
NID5001NT4G
T
J
, T
stg
鈭?5 to 150
擄C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Minimum FR4 PCB, steady state.
2. Mounted onto a 2鈥?square FR4 board
(1鈥?square, 2 oz. Cu 0.06鈥?thick single鈭抯ided, t = steady state).
鈥燜or information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
漏
Semiconductor Components Industries, LLC, 2006
1
April, 2006 鈭?Rev. 8
Publication Order Number:
NID5001N/D

NID5001NT4G 產(chǎn)品屬性

  • 2,500

  • 集成電路 (IC)

  • PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 內(nèi)部開關(guān)

  • HDPlus™

  • 低端

  • 非反相

  • 1

  • 23 毫歐

  • -

  • 33A

  • -

  • -55°C ~ 150°C

  • 表面貼裝

  • TO-252-3，DPak（2 引線+接片），SC-63

  • DPAK-3

  • 帶卷 (TR)

  • NID5001NT4GOSNID5001NT4GOS-NDNID5001NT4GOSTR

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