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NIB6404-5L Datasheet

  • NIB6404-5L

  • TRANSISTOR | MOSFET | N-CHANNEL | 40V V(BR)DSS | 52A I(D) | ...

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  • 8頁(yè)

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NIB6404-5L
Preferred Device
HDPlust
52 Amps, 40 Volts
Self Protected with Temperature Sense
N鈥揅hannel D
2
PAK
HDPlus devices are an advanced series of Power MOSFETs which
utilize ON Semiconductor鈥檚 latest MOSFET technology process to
achieve the lowest possible on鈥搑esistance per silicon area while
incorporating additional features such as clamp diodes. They are
capable of withstanding high energy in the avalanche and
commutation modes. The avalanche energy is specified to eliminate
guesswork in designs where inductive loads are switched and offer
additional safety margin against unexpected voltage transients.
This new HDPlus device features integrated Gate鈥搕o鈥揝ource diodes
for ESD protection, and Gate鈥搕o鈥揇rain clamp for overvoltage
protection. Also, this device integrates a sense diode for temperature
monitoring.
鈥?/div>
Ultra Low R
DS(on)
Provides Higher Efficiency
鈥?/div>
I
DSS
Specified at Elevated Temperature
鈥?/div>
Avalanche Energy Specified
鈥?/div>
Overvoltage Protection
鈥?/div>
FET ESD Human Body Model Discharge Sensitivity Class 3
鈥?/div>
Temperature Sense Diode
MAXIMUM RATINGS
(T
J
= 25擄C unless otherwise noted)
Rating
Drain鈥搕o鈥揝ource Voltage
Drain鈥搕o鈥揋ate Voltage
Gate鈥搕o鈥揝ource Voltage
Operating and Storage
Temperature Range
Single Pulse Drain鈥搕o鈥揝ource Avalanche
Energy 鈥?Starting T
J
= 25擄C (Note 1)
(V
DD
= 25 Vdc, V
GS
= 5.0 Vdc,
I
L(pk)
= 25 A, L = 1.4 mH, R
G
= 10 k鈩?
Drain Current
鈥?Continuous @ T
A
= 25擄C
鈥?Continuous @ T
A
= 140擄C
鈥?Single Pulse (t
p
v10
碌s)
Total Power Dissipation (t
鈮?/div>
10 seconds)
Linear Derating Factor
Thermal Resistance
鈥?Junction鈥搕o鈥揅ase
鈥?Junction鈥搕o鈥揂mbient (Note 1)
Symbol
V
DSS
V
DGR
V
GS
T
J
, T
stg
E
AS
Value
40
40
"10
鈥?5 to
+175
450
Unit
Vdc
Vdc
Vdc
擄C
mJ
NIB6404 = Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
D
2
PAK
CASE 936D
PLASTIC
NIB6404
AYWW
G
T1 T2
S
http://onsemi.com
52 AMPERES
40 VOLTS
R
DS(on)
= 20 m鈩?/div>
D
T2
G
T1
S
MARKING
DIAGRAM
D
Adc
I
D
I
D
I
DM
P
D
@ T
A
= 25擄C
R
胃JC
R
胃JA
52
25
200
115
0.76
1.3
80
W
W/擄C
擄C/W
Preferred
devices are recommended choices for future use
and best overall value.
ORDERING INFORMATION
Device
NIB6404鈥?L
Package
D
2
PAK
Shipping
800 Tape & Reel
1. Measured while surface mounted to an FR4 board using the minimum
recommended pad size. Typical value is 64擄C/W.
Observe the general handling precautions for electrostatic鈥揹ischarge sensitive
devices (ESD) to prevent damage.
Semiconductor Components Industries, LLC, 2002
1
February, 2002 鈥?Rev. 2
Publication Order Number:
NIB6404鈥?L/D

NIB6404-5L相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
    描述
    廠商
    下載
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 40V V(BR)DSS | 52A I(D) | ...
    ETC
  • 英文版
    HDPlus Single N-Channel Self-Protected Field Effect Transist...
    ETC

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