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NIB6404-5L/D Datasheet

  • NIB6404-5L/D

  • HDPlus Single N-Channel Self-Protected Field Effect Transist...

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NIB6404-5L
Preferred Device
Product Preview
SMARTDISCRETESt
52 Amps, 40 Volts
Self Protected with Temperature Sense
N鈥揅hannel D2PAK
SMARTDISCRETES devices are an advanced series of Power
MOSFETs which utilize ON Semiconductor鈥檚 latest MOSFET
technology process to achieve the lowest possible on鈥搑esistance per
silicon area while incorporating additional features such as clamp
diodes. They are capable of withstanding high energy in the avalanche
and commutation modes. The avalanche energy is specified to
eliminate guesswork in designs where inductive loads are switched
and offer additional safety margin against unexpected voltage
transients.
This new SMARTDISCRETES device features integrated
Gate鈥搕o鈥揝ource diodes for ESD protection, and Gate鈥搕o鈥揇rain clamp
for overvoltage protection. Also, this device integrates a sense diode
for temperature monitoring.
鈥?/div>
Ultra Low RDS(on) Provides Higher Efficiency
鈥?/div>
IDSS Specified at Elevated Temperature
鈥?/div>
Avalanche Energy Specified
鈥?/div>
Overvoltage Protection
鈥?/div>
Temperature Sense Diode
鈥?/div>
ESD Human Body Model Discharge Sensitivity Class 3
MAXIMUM RATINGS
(TJ = 25擄C unless otherwise noted)
Rating
Drain鈥搕o鈥揝ource Voltage
Drain鈥搕o鈥揋ate Voltage
Gate鈥搕o鈥揝ource Voltage
Operating and Storage
Temperature Range
Single Pulse Drain鈥搕o鈥揝ource Avalanche
Energy 鈥?Starting TJ = 25擄C (Note 1.)
(VDD = 25 Vdc, VGS = 5.0 Vdc,
IL(pk) = 25 A, L = 1.4 mH, RG = 10 k鈩?
Drain Current
鈥?Continuous @ TA = 25擄C
鈥?Continuous @ TA = 140擄C
鈥?Single Pulse (tp
v10
碌s)
Total Power Dissipation (t
鈮?/div>
10 seconds)
Linear Derating Factor
Thermal Resistance
鈥?Junction鈥搕o鈥揅ase
鈥?Junction鈥搕o鈥揂mbient (Note 1.)
Symbol
VDSS
VDGR
VGS
TJ, Tstg
EAS
Value
40
40
"10
鈥?5 to
+175
450
Unit
Vdc
Vdc
Vdc
擄C
mJ
TBD = Specific Device Code
http://onsemi.com
52 AMPERES
40 VOLTS
RDS(on) = 20 m鈩?/div>
D
T2
G
T1
S
MARKING
DIAGRAM
D2PAK
CASE 936D
PLASTIC
TBD
ORDERING INFORMATION
Device
NIB6404鈥?L
Package
D2PAK
Shipping
TBD
Adc
ID
ID
IDM
PD @ TA
= 25擄C
R
胃JC
R
胃JA
52
25
200
115
0.76
1.3
80
W
W/擄C
擄C/W
Preferred
devices are recommended choices for future use
and best overall value.
1. Measured while surface mounted to an FR4 board using the minimum
recommended pad size. Typical value is 64擄C/W.
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
Semiconductor Components Industries, LLC, 2001
1
February, 2001 鈥?Rev. 1
Publication Order Number:
NIB6404鈥?L/D

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  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 40V V(BR)DSS | 52A I(D) | ...
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    HDPlus Single N-Channel Self-Protected Field Effect Transist...
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