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NGP15N41CL Datasheet

  • NGP15N41CL

  • Ignition IGBT 15 Amps, 410 Volts

  • 98.61KB

  • 12頁

  • ONSEMI

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NGD15N41CLT4,
NGB15N41CLT4,
NGP15N41CL
Preferred Device
Ignition IGBT
15 Amps, 410 Volts
N鈭扖hannel DPAK, D
2
PAK and TO鈭?20
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Over鈭扸oltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
鈥?/div>
Ideal for Coil鈭抩n鈭扨lug Applications
鈥?/div>
DPAK Package Offers Smaller Footprint and Increased Board Space
鈥?/div>
Gate鈭扙mitter ESD Protection
鈥?/div>
Temperature Compensated Gate鈭扖ollector Voltage Clamp Limits
Stress Applied to Load
鈥?/div>
Integrated ESD Diode Protection
鈥?/div>
New Design Increases Unclamped Inductive Switching (UIS) Energy
Per Area
鈥?/div>
Low Threshold Voltage to Interface Power Loads to Logic or
Microprocessor Devices
鈥?/div>
Low Saturation Voltage
鈥?/div>
High Pulsed Current Capability
鈥?/div>
Optional Gate Resistor (R
G
) and Gate鈭扙mitter Resistor (R
GE
)
MAXIMUM RATINGS
(T
J
= 25擄C unless otherwise noted)
Rating
Collector鈭扙mitter Voltage
Collector鈭扜ate Voltage
Gate鈭扙mitter Voltage
Collector Current鈭扖ontinuous
@ T
C
= 25擄C 鈭?Pulsed
ESD (Human Body Model)
R = 1500
鈩?
C = 100 pF
ESD (Machine Model) R = 0
鈩?
C = 200 pF
Total Power Dissipation @ T
C
= 25擄C
Derate above 25擄C
Operating and Storage Temperature Range
Symbol
V
CES
V
CER
V
GE
I
C
ESD
8.0
ESD
P
D
T
J
, T
stg
800
107
0.71
鈭?5 to
+175
V
Watts
W/擄C
擄C
1
Value
440
440
15
15
50
Unit
V
DC
V
DC
V
DC
A
DC
A
AC
kV
TO鈭?20AB
CASE 221A
STYLE 9
1
2
3
4
4
D
2
PAK
CASE 418B
STYLE 4
http://onsemi.com
15 AMPS
410 VOLTS
V
CE(on)
3
2.1 V @
I
C
= 10 A, V
GE
.
4.5 V
C
G
RG
RGE
E
4
1 2
3
DPAK
CASE 369C
STYLE 2
2
3
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 8 of this data sheet.
DEVICE MARKING INFORMATION
See general marking information in the device marking
section on page 8 of this data sheet.
Preferred
devices are recommended choices for future use
and best overall value.
漏
Semiconductor Components Industries, LLC, 2004
1
March, 2004 鈭?Rev. 5
Publication Order Number:
NGD15N41CL/D

NGP15N41CL 產(chǎn)品屬性

  • 50

  • 分離式半導(dǎo)體產(chǎn)品

  • IGBT - 單路

  • -

  • -

  • 440V

  • 2.1V @ 4.5V，10A

  • 15A

  • 107W

  • 邏輯

  • 通孔

  • TO-220-3

  • TO-220AB

  • 管件

  • NGP15N41CLOS

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