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NGD18N40CLBT4G Datasheet

  • NGD18N40CLBT4G

  • Ignition IGBT 18 Amps, 400 Volts

  • 153.40KB

  • 8頁(yè)

  • ONSEMI

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NGD18N40CLB
Ignition IGBT
18 Amps, 400 Volts
N鈭扖hannel DPAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Over鈭扸oltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
Features
http://onsemi.com
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Ideal for Coil鈭抩n鈭扨lug Applications
DPAK Package Offers Smaller Footprint for Increased Board Space
Gate鈭扙mitter ESD Protection
Temperature Compensated Gate鈭扖ollector Voltage Clamp Limits
Stress Applied to Load
Integrated ESD Diode Protection
New Design Increases Unclamped Inductive Switching (UIS) Energy
Per Area
Low Threshold Voltage Interfaces Power Loads to Logic or
Microprocessor Devices
Low Saturation Voltage
High Pulsed Current Capability
Optional Gate Resistor (R
G
) and Gate鈭扙mitter Resistor (R
GE
)
Emitter Ballasting for Short鈭扖ircuit Capability
Pb鈭扚ree Package is Available*
18 AMPS
400 VOLTS
V
CE(on)
3
2.0 V @
I
C
= 10 A, V
GE
.
4.5 V
C
G
R
G
R
GE
E
4
1 2
3
DPAK
CASE 369C
STYLE 7
MARKING DIAGRAM
1
Gate
MAXIMUM RATINGS
(T
J
= 25擄C unless otherwise noted)
Rating
Collector鈭扙mitter Voltage
Collector鈭扜ate Voltage
Gate鈭扙mitter Voltage
Collector Current鈭扖ontinuous
@ T
C
= 25擄C
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Pulsed
ESD (Human Body Model)
R = 1500
惟,
C = 100 pF
ESD (Machine Model) R = 0
惟,
C = 200 pF
Total Power Dissipation @ T
C
= 25擄C
Derate above 25擄C
Operating and Storage Temperature Range
Symbol
V
CES
V
CER
V
GE
I
C
ESD
8.0
ESD
P
D
T
J
, T
stg
800
115
0.77
鈭?5
to
+175
V
Watts
W/擄C
擄C
Value
430
430
18
15
50
Unit
V
DC
V
DC
V
DC
A
DC
A
AC
kV
2
Collector
3
Emitter
G18N40B
Y
WW
G
YWW
G18
N40BG
4
Collector
= Device Code
= Year
= Work Week
= Pb鈭扚ree Device
ORDERING INFORMATION
Device
NGD18N40CLBT4
NGD18N40CLBT4G
Package
DPAK
Shipping
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2500/Tape & Reel
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb鈭扚ree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
DPAK
2500/Tape & Reel
(Pb鈭扚ree)
鈥燜or information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
漏
Semiconductor Components Industries, LLC, 2006
May, 2006
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Rev. 7
1
Publication Order Number:
NGD18N40CLB/D

NGD18N40CLBT4G 產(chǎn)品屬性

  • 2,500

  • 分離式半導(dǎo)體產(chǎn)品

  • IGBT - 單路

  • -

  • -

  • 430V

  • 2V @ 4.5V，10A

  • 15A

  • 115W

  • 邏輯

  • 表面貼裝

  • TO-252-3，DPak（2 引線+接片），SC-63

  • DPAK-3

  • 帶卷 (TR)

  • NGD18N40CLBT4GOSNGD18N40CLBT4GOS-NDNGD18N40CLBT4GOSTR

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