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NGB18N40CLBT4/D Datasheet

  • NGB18N40CLBT4/D

  • Ignition IGBT in D2ak (Gen3) with Improved SCIS Energy and V...

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NGB18N40CLBT4
Ignition IGBT
18 Amps, 400 Volts
N-Channel D
2
PAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Over-Voltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
鈥?/div>
Ideal for Coil-on-Plug Applications
鈥?/div>
Gate-Emitter ESD Protection
鈥?/div>
Temperature Compensated Gate-Collector Voltage Clamp Limits
Stress Applied to Load
鈥?/div>
Integrated ESD Diode Protection
鈥?/div>
New Design Increases Unclamped Inductive Switching (UIS) Energy
Per Area
鈥?/div>
Low Threshold Voltage to Interface Power Loads to Logic or
Microprocessor Devices
鈥?/div>
Low Saturation Voltage
鈥?/div>
High Pulsed Current Capability
鈥?/div>
Optional Gate Resistor (R
G
) and Gate-Emitter Resistor (R
GE
)
鈥?/div>
Emitter Ballasting for Short-Circuit Capability
MAXIMUM RATINGS
(T
J
= 25擄C unless otherwise noted)
Rating
Collector-Emitter Voltage
Collector-Gate Voltage
Gate-Emitter Voltage
Collector Current-Continuous
@ T
C
= 25擄C - Pulsed
ESD (Human Body Model)
R = 1500
鈩?
C = 100 pF
ESD (Machine Model) R = 0
鈩?
C = 200 pF
Total Power Dissipation @ T
C
= 25擄C
Derate above 25擄C
Operating and Storage Temperature Range
Symbol
V
CES
V
CER
V
GE
I
C
ESD
8.0
ESD
P
D
T
J
, T
stg
800
115
0.77
-55 to
+175
V
Watts
W/擄C
擄C
1
Gate
2
Collector
3
Emitter
Value
430
430
18
18
50
Unit
V
DC
V
DC
V
DC
A
DC
A
AC
kV
1
http://onsemi.com
18 AMPS
400 VOLTS
V
CE(on)
3
2.0 V @
I
C
= 10 A, V
GE
.
4.5 V
C
G
RG
RGE
E
4
2
3
D
2
PAK
CASE 418B
STYLE 4
MARKING
DIAGRAM
4
Collector
GB
18N40B
YWW
GB18N40B = NGB18N40CLB
Y
= Year
WW
= Work Week
ORDERING INFORMATION
Device
NGB18N40CLBT4
Package
D
2
PAK
Shipping
800/Tape & Reel
漏
Semiconductor Components Industries, LLC, 2003
1
March, 2003 - Rev. 0
Publication Order Number:
NGB18N40CLB/D

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