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NEZ6472-8D Datasheet

  • NEZ6472-8D

  • 4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

  • 18頁

  • NEC   NEC

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PRELIMINARY DATA SHEET
GaAs MES FET
4W/8W C-BAND POWER GaAs FET NEZ Series
4W/8W C-BAND POWER GaAs FET
N-CHANNEL GaAs MES FET
DESCRIPTION
The NEZ Series of microwave power GaAs FETs offer
high output power, high gain and high efficiency at C-band
for microwave and satellite communications.
Internal input and output circuits matched to 50
鈩?/div>
are
designed to provide good flatness of gain and output power
in allocated band.
To reduce the thermal resistance, the device has a PHS
(Plated Heat Sink) structure.
NEC鈥檚 strigent quality assurance and test procedures
guarantee the highest reliability and performance.
PACKAGE DIMENSIONS
(unit: mm)
0.5鹵0.1
2.5MIN.
C1.5 4PLACES
SOURCE
R1.6 2PLACES
GATE
2.4
12.9鹵0.2
3.2
6.45鹵0.05
DRAIN
17.0鹵0.2
21.0鹵0.3
10.7
2.5MIN.
SELECTION CHART
NEZ PART NUMBER
NEZ3642-4D, 8D, 8DD
NEZ4450-4D, 4DD/8D, 8DD
NEZ5964-4D, 4DD/8D, 8DD
NEZ6472-4D, 4DD/8D, 8DD
NEZ7177-4D, 4DD/8D, 8DD
NEZ7785-4D, 4DD/8D, 8DD
FREQUENCY BAND (GHz)
3.6 to 4.2
+0.1
0.1
鈥?.05
5.0MAX.
0.2MAX.
2.6鹵0.2
1.6
4.4 to 5.0
5.9 to 6.45
6.4 to 7.2
7.1 to 7.7
7.7 to 8.5
12.0
FEATURES
鈥?Internally matched to 50
鈩?/div>
鈥?High power output
鈥?High linear gain
鈥?High reliability
鈥?Low distortion
Document No. P10981EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
漏
1996

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