The NEZ1011-2E and NEZ1414-2E are power GaAs MESFETs which provide high gain, high efficiency and high
output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with
鈩?/div>
external circuit. To reduce thermal resistance the device has a PHS (Plated Heat Sink) structure. The
device incorporates a WSi (tungsten silicide) gate structure for high reliability.
FEATURES
鈥?High Output Power : P
o (1 dB)
= +34.0 dBm typ.
鈥?High Linear Gain
鈥?High Efficiency
: 8.5 dB typ. (NEZ1011-2E), 7.5 dB typ. (NEZ1414-2E)
: 30 % typ.
鈥?Input and Output Internally Matched for Optimum performance
ORDERING INFORMATION
Part Number
NEZ1011-2E
NEZ1414-2E
T-78
Package
Remark
To order evaluation samples, please contact your local NEC sales office.
(Part number for sample order: NEZ1011-2E, NEZ1414-2E)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25擄C)
Operation in excess of any one of these parameters may result in permanent damage.
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Symbol
V
DS
V
GS
I
DS
Ratings
15
鈥?
3.0 (NEZ1011-2E)
2.5 (NEZ1414-2E)
+20
鈥?0
15
175
鈥?5 to +175
Unit
V
V
A
Gate Forward Current
Gate Reverse Current
Total Power Dissipation
Channel Temperature
Storage Temperature
I
GF
I
GR
P
T
T
ch
T
stg
mA
mA
W
擄C
擄C
Caution Please handle this device at static-free workstation, because this is an electrostatic sensitive
device.
The information in this document is subject to change without notice.
Document No. P13725EJ1V0DS00 (1st edition)
Date Published September 1998 N CP(K)
Printed in Japan
漏
1998