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NPN SILICON GERMANIUM RF TRANSISTOR

NESG3033M14

NPN SiGe RF TRANSISTOR FOR

LOW NOISE, HIGH-GAIN AMPLIFICATION

4-PIN LEAD-LESS MINIMOLD (M14, 1208 PKG)

FEATURES

鈥?The device is an ideal choice for low noise, high-gain amplification

NF = 0.6 dB TYP. @ V

CE

= 2 V, I

C

= 6 mA, f = 2.0 GHz

鈥?Maximum stable power gain: MSG = 20.5 dB TYP. @ V

CE

= 2 V, I

C

= 15 mA, f = 2.0 GHz

鈥?SiGe HBT technology (UHS3) adopted: f

max

= 110 GHz

鈥?This product is improvement of ESD of NESG3032M14.

鈥?4-pin lead-less minimold (M14, 1208 PKG)

ORDERING INFORMATION

Part Number

NESG3033M14

Order Number

NESG3033M14-A

Package

4-pin lead-less minimold

(M14, 1208 PKG)

NESG3033M14-T3 NESG3033M14-T3-A

(Pb-Free)

Quantity

50 pcs

(Non reel)

10 kpcs/reel

Supplying Form

鈥?8 mm wide embossed taping

鈥?Pin 1 (Collector), Pin 4 (Emitter) face the

perforation side of the tape

Remark

To order evaluation samples, contact your nearby sales office.

Unit sample quantity is 50 pcs.

ABSOLUTE MAXIMUM RATINGS (T

A

= +25擄C)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Base Current

Collector Current

Total Power Dissipation

Junction Temperature

Storage Temperature

Symbol

V

CBO

Note 1

Ratings

5.0

4.3

12

35

150

150

鈭?5

to +150

Unit

V

V

mA

mA

mW

擄C

擄C

V

CEO

I

B

Note 1

I

C

P

tot

Note 2

T

j

T

stg

Notes 1.

V

CBO

and I

B

are limited by the permissible current of the protection element.

2.

Mounted on 1.08 cm

2

脳

1.0 mm (t) glass epoxy PWB

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

Document No. PU10640EJ01V0DS (1st edition)

Date Published September 2006 NS CP(K)

2006

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