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NESG2031M05 Datasheet

  • NESG2031M05

  • NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR

  • 157.71KB

  • 12頁

  • NEC   NEC

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NEC's NPN SiGe
NESG2031M05
HIGH FREQUENCY TRANSISTOR
FEATURES
鈥?/div>
鈥?/div>
HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY
V
CEO
= 5 V (Absolute Maximum)
LOW NOISE FIGURE:
NF = 0.8 dBm at 2 GHz
NF = 1.3 dBm at 5.2 GHz
HIGH MAXIMUM STABLE GAIN:
MSG = 21.5 dB at 2 GHz
LOW PROFILE M05 PACKAGE:
SOT-343 footprint, with a height of only 0.59 mm
Flat lead style for better RF performance
鈥?/div>
鈥?/div>
M05
DESCRIPTION
NEC's NESG2031M05 is fabricated using NEC s high voltage
Silicon Germanium process (UHS2-HV), and is designed for
a wide range of applications including low noise ampli鏗乪rs,
medium power ampli鏗乪rs, and oscillators.
NEC s
low pro鏗乴e, 鏗俛t lead style M05 Package provides high
frequency performance for compact wireless designs.
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
NF
G
a
NF
G
a
RF
MSG
|S
21E
|
P
1dB
OIP
3
f
T
C
re
I
CBO
DC
I
EBO
h
FE
Notes:
1. MSG = S
21
S
12
2. Collector to base capacitance is measured by capacitance meter (automatic balance bridge method) when emitter pin is connected to
the guard pin.
3. Pulsed measurement, pulse width
鈮?/div>
350
碌s,
duty cycle
鈮?/div>
2 %.
2
NESG2031M05
M05
UNITS
dB
dB
dB
dB
dB
dB
dBm
dBm
GHz
pF
nA
nA
130
190
20
15.0
19.0
16.0
MIN
TYP
1.3
10.0
0.8
17.0
21.5
18.0
13
23
25
0.15
0.25
100
100
260
1.1
MAX
PARAMETERS AND CONDITIONS
Noise Figure at V
CE
= 2 V, I
C
= 5 mA, f = 5.2 GHz,
Z
S
= Z
SOPT
, ZL = Z
LOPT
Associated Gain at V
CE
= 2 V, I
C
= 5 mA, f = 5.2 GHz,
Z
S
= Z
SOPT
, ZL = Z
LOPT
Noise Figure at V
CE
= 2 V, I
C
= 5 mA, f = 2 GHz,
Z
S
= Z
SOPT
, ZL = Z
LOPT
Associated Gain at V
CE
= 2 V, I
C
= 5 mA, f = 2 GHz,
Z
S
= Z
SOPT
, ZL = Z
LOPT
Maximum Stable Gain
1
at V
CE
= 3 V, I
C
= 20 mA, f = 2 GHz
Insertion Power Gain at V
CE
= 3 V, I
C
= 20 mA, f = 2 GHz
Output Power at 1dB Compression Point at
V
CE
= 3 V, I
C
= 20 mA, f = 2 GHz
Output 3rd Order Intercept Point at V
CE
= 3 V, I
C
= 20 mA, f = 2 GHz
Gain Bandwidth Product at V
CE
= 3 V, I
C
= 20 mA, f = 2 GHz
Reverse Transfer Capacitance
2
at V
CB
= 2 V, I
C
= 0 mA, f = 1 GHz
Collector Cutoff Current at V
CB
= 5V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
DC Current Gain at V
CE
= 2 V, I
C
= 5 mA
3
California Eastern Laboratories

NESG2031M05 產(chǎn)品屬性

  • NEC

  • 175 mW

  • SMD/SMT

  • M05

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