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NESG2031M05-T1-A Datasheet

  • NESG2031M05-T1-A

  • California Eastern Labs [NPN SiGe HIGH FREQUENCY TRANSISTOR...

  • CEL   CEL

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NESG2031M05
NEC's NPN SiGe
HIGH FREQUENCY TRANSISTOR
FEATURES
鈥?/div>
鈥?/div>
HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY
V
CEO
= 5 V (Absolute Maximum)
LOW NOISE FIGURE:
NF = 0.8 dBm at 2 GHz
NF = 1.3 dBm at 5.2 GHz
HIGH MAXIMUM STABLE GAIN:
MSG = 21.5 dB at 2 GHz
LOW PROFILE M05 PACKAGE:
SOT-343 footprint, with a height of only 0.59 mm
Flat lead style for better RF performance
Pb Free Available (-A)
NPN SiGe RF TRANSISTOR
鈥?/div>
鈥?/div>
M05
鈥?/div>
NEC's NESG2031M05 is fabricated using NEC始s high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide
range of applications including low noise ampli鏗乪rs, medium power ampli鏗乪rs, and oscillators.
NEC始s low pro鏗乴e, 鏗俛t lead style M05 Package provides high frequency performance for compact wireless designs.
DESCRIPTION
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
NF
G
a
NF
G
a
RF
MSG
|S
21E
|
2
P
1dB
OIP
3
f
T
C
re
I
CBO
DC
I
EBO
h
FE
Notes:
1. MSG = S
21
S
12
2. Collector to base capacitance is measured by capacitance meter (automatic balance bridge method) when emitter pin is connected to the guard pin.
3. Pulsed measurement, pulse width
鈮?/div>
350
渭s,
duty cycle
鈮?/div>
2 %.
The information in this document is subject to change without notice. Before using this document, please confirm
that this is the latest version.
Date Published: June 22, 2005
NESG2031M05
M05
UNITS
dB
dB
dB
dB
dB
dB
dBm
dBm
GHz
pF
nA
nA
130
190
20
15.0
19.0
16.0
MIN
TYP
1.3
10.0
0.8
17.0
21.5
18.0
13
23
25
0.15
0.25
100
100
260
1.1
MAX
PARAMETERS AND CONDITIONS
Noise Figure at V
CE
= 2 V, I
C
= 5 mA, f = 5.2 GHz,
Z
S
= Z
SOPT
, ZL = Z
LOPT
Associated Gain at V
CE
= 2 V, I
C
= 5 mA, f = 5.2 GHz,
Z
S
= Z
SOPT
, ZL = Z
LOPT
Noise Figure at V
CE
= 2 V, I
C
= 5 mA, f = 2 GHz,
Z
S
= Z
SOPT
, ZL = Z
LOPT
Associated Gain at V
CE
= 2 V, I
C
= 5 mA, f = 2 GHz,
Z
S
= Z
SOPT
, ZL = Z
LOPT
Maximum Stable Gain
1
at V
CE
= 3 V, I
C
= 20 mA, f = 2 GHz
Insertion Power Gain at V
CE
= 3 V, I
C
= 20 mA, f = 2 GHz
Output Power at 1dB Compression Point at
V
CE
= 3 V, I
C
= 20 mA, f = 2 GHz
Output 3rd Order Intercept Point at V
CE
= 3 V, I
C
= 20 mA, f = 2 GHz
Gain Bandwidth Product at V
CE
= 3 V, I
C
= 20 mA, f = 2 GHz
Reverse Transfer Capacitance at V
CB
= 2 V, I
C
= 0 mA, f = 1 GHz
2
Collector Cutoff Current at V
CB
= 5V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
DC Current Gain
3
at V
CE
= 2 V, I
C
= 5 mA

NESG2031M05-T1-A 產(chǎn)品屬性

  • 3,000

  • 分離式半導(dǎo)體產(chǎn)品

  • RF 晶體管 (BJT)

  • -

  • NPN

  • 5V

  • 25GHz

  • 0.8dB ~ 1.3dB @ 2GHz ~ 5.2GHz

  • 10dB ~ 17dB

  • 175mW

  • 130 @ 5mA，2V

  • 35mA

  • 表面貼裝

  • SC-82A，SOT-343

  • SOT-343

  • 帶卷 (TR)

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