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NESG2030M04 Datasheet

  • NESG2030M04

  • NPN SiGe HIGH FREQUENCY TRANSISTOR

  • 9頁

  • NEC   NEC

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NPN SiGe HIGH FREQUENCY TRANSISTOR NESG2030M04
FEATURES
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
SiGe TECHNOLOGY:
f
T
= 60 GHz Process
LOW NOISE FIGURE:
NF = 0.9 dBm at 2 GHz
HIGH MAXIMUM STABLE GAIN:
MSG = 20 dB at 2 GHz
NEW LOW PROFILE M04 PACKAGE:
SOT-343 footprint, with a height of only 0.59 mm
Flat lead style for better RF performance
M04
DESCRIPTION
The NESG2030M04 is fabricated using NEC's state-of-the-art
SiGe, wafer process. With a typical transition frequency of
60 GHz the NESG2030M04 is usable in applications from 100
MHz to over 10 GHz. Maximum DC current input of 35 mA
provides a device with a usable current range of 250
碌A(chǔ)
to 25
mA. The NESG2030M04 provides excellent low voltage/low
current performance.
NEC's new low profile/flat lead style "M04" package is ideal for
today's portable wireless applications. The NESG2030M04 is
an ideal choice for LNA and oscillator requirements in all
mobile communication systems.
ORDERING INFORMATION
PART NUMBER
NESG2030M04
NESG2030M04-T2
QUANTITY
50 pcs(non reel)
3 kpcs/reel
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C)
PART NUMBER
EIAJ
1
REGISTERED NUMBER
PACKAGE OUTLINE
SYMBOLS
I
CBO
PARAMETERS AND CONDITIONS
Collector Cutoff Current at V
CB
= 5V, I
E
= 0
Emitter Cutoff Current at V
EB
= 0.5 V, I
C
= 0
DC Current Gain
2
at V
CE
= 2 V, I
C
= 5 mA
Reverse Transfer Capacitance
3
at V
CB
= 2 V, I
E
= 0 mA, f = 1 GHz
Noise Figure at V
CE
= 2 V, I
C
= 5 mA, f = 2 GHz, Z
IN
= Z
OPT
Associated Gain at V
CE
= 2 V, I
C
= 5 mA, f = 2 GHz, Z
S
= Z
OPT
Maximum Stable Gain
4
at V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
Insertion Power Gain at V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
Output Power at 1 dB compression point
V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
Third Order Intercept Point, V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
pF
dB
GHz
dB
dB
dBm
dBm
18
16
UNITS
nA
nA
200
0.17
0.9
16
20
18
12
22
MIN
NESG2030M04
2SC5761
M04
TYP
MAX
200
200
400
0.22
1.1
DC
I
EBO
h
FE
C
re
NF
G
a
MSG
RF
|S
21E
|
2
P
1dB
OIP
3
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width
鈮?/div>
350
碌s,
duty cycle
鈮?/div>
2 %.
3. Collector to base capacitance is measured by capacitance meter (automatic balance bridge method) when emitter pin is connected to
the guard pin.
4. MSG = S
21
S
12
California Eastern Laboratories

NESG2030M04 產(chǎn)品屬性

  • CEL

  • 80 mW

  • SMD/SMT

  • SOT-343

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