PRELIMINARY DATA SHEET
N-CHANNEL GaAs MES FET
NES1823P-30
30 W L-S BAND PUSH-PULL POWER GaAs MES FET
DESCRIPTION
The NES1823P-30 is a 30 W push-pull type GaAs MES FET designed for high power transmitter applications for
PCS, DCS and IMT 2000 base station systems. It is capable of delivering 30 watts of output power (CW) with high linear
gain, high efficiency and excellent distortion. Its primary band is 1.8 to 2.3 GHz, however with different matching, 60
MHz or less of instantaneous bandwidth can be achieved anywhere from 0.8 to 2.3 GHz.
thermal characteristics, and reliability.
Reliability and performance uniformity are assured by NEC鈥檚 stringent quality and control procedures.
The device employs
0.9
碌
m Tungsten Silicide gates, via holes, plated heat sink, and silicon dioxide passivation for superior performance,
FEATURES
鈥?Push-pull type N-channel GaAs MES FET
鈥?High output power
鈥?High linear gain
: 30 W TYP.
: 13 dB TYP.
鈥?High power added efficiency : 40 % TYP. @V
DS
= 10 V, I
Dset
= 4 A, f = 2.2 GHz
ORDERING INFORMATION (PLAN)
Part Number
NES1823P-30
T-86
Package
Supplying Form
鈭?/div>
Remark
To order evaluation samples, please contact your local NEC sales office.
(Part number for sample order: NES1823P-30)
ABSOLUTE MAXIMUM RATINGS (T
A
= +25擄C)
Operation in excess of any one of these parameters may result in permanent damage.
Parameter
Drain to Source Voltage
Gate to Source Voltage
Gate to Drain Voltage
Drain Current
Gate Current
Total Power Dissipation
Channel Temperature
Storage Temperature
Symbol
V
DS
V
GSO
V
GDO
I
D
I
G
P
T
T
ch
T
stg
Ratings
15
鈥?
鈥?8
27
180
90
Note
Unit
V
V
V
A
mA
W
擄C
擄C
175
鈥?5 to +175
Note
T
C
= 25擄C
Caution Please handle this device at static-free workstation, because this is an electrostatic sensitive
device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P14491EJ1V0DS00 (1st edition)
Date Published October 1999 N CP(K)
Printed in Japan
漏
1999
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