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NES1823P-100 Datasheet

  • NES1823P-100

  • 100W L-BAND PUSH-PULL POWER GaAs MESFET

  • 154.91KB

  • 20頁

  • NEC   NEC

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PRELIMINARY DATA SHEET
N-CHANNEL GaAs MESFET
NES1823P-100
100W L-BAND PUSH-PULL POWER GaAs MESFET
DESCRIPTION
The NES1823P-100 is a 100 W push-pull type GaAs MESFET designed for high power transmitter applications for
IMT-2000 and PCS/PCN base station systems. It is capable of delivering 100 watts of output power with high linear
gain, high efficiency and excellent distortion. Its primary band is 1.8 to 2.3 GHz with different maching.
The device employs Tungsten Silicide gates, via holes, plated heat sink, and silicon dioxide and nitride
passivation for superior performance, thermal characteristics, and reliability.
Reliability and performance uniformity are assured by NEC鈥檚 stringent quality and control procedures.
FEATURES
鈥?Push-pull type N-channel GaAs MESFET
鈥?High Output Power : 100 W TYP.
鈥?High Linear Gain
: 11.0 dB TYP.
鈥?High Drain Efficiency: 50 % TYP. @V
DS
= 10 V, I
Dset
= 6 A, f = 2.2 GHz
ORDERING INFORMATION (PLAN)
Part Number
NES1823P-100
T-92
Package
Supplying Form
ESD protective envelope
Remark
To order evaluation samples, please contact your local NEC sales office.
(Part number for sample order: NES1823P-100)
ABSOLUTE MAXIMUM RATINGS (T
A
= +25擄C)
Operation in excess of any one of these parameters may result in permanent damage.
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Total Power Dissipation
Channel Temperature
Storage Temperature
Symbol
V
DS
V
GSO
I
D
I
G
P
T
T
ch
T
stg
Ratings
15
鈥?
76
440
220
Note
Unit
V
V
A
mA
W
擄C
擄C
175
鈥?5 to +175
Note
T
C
= 25擄C
Caution Please handle this device at static-free workstation, because this is an electrostatic sensitive
device.
The information in this document is subject to change without notice.
Document No. P13839EJ1V0DS00 (1st edition)
Date Published November 1998 N CP(K)
Printed in Japan
漏
1998

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