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DATA SHEET

PRELIMINARY DATA SHEET

GaAs MES FET

NES1821B-30

30W L-BAND POWER GaAs FET

N-CHANNEL GaAs MES FET

DESCRIPTION

The NES1821B-30 is power GaAs FET which provides

high output power and high gain in the 1.8-2.1 GHz

band.

Internal input matching circuits are designed to

optimize performance. The device has a 0.8

m

m gate

length for increased linear gain. To reduce thermal

resistance, the device uses PHS (Plated Heat Sink)

technology.

The device incorporates WSi (tungsten silicide) gate

for

high

reliability

and

SiO

2

glassivation

for

R1.2

17.4鹵0.3 8.0

2.4

SOURCE

PACKAGE DIMENSIONS (UNIT: mm)

24鹵0.3

20.4

1.0鹵0.1

GATE

surface stability.

FEATURES

路

路

路

路

路

DRAIN

0.1

2.4

0.2 MAX

4.5 MAX

1.8

High output power

High gain

High power added efficiency

Internally matched input

High reliability

ABSOLUTE MAXIMUM RATINGS (T

A

= 25

擄

C)

Drain to Source Voltage

Gate to Source Voltage

Gate to Drain Voltage

Drain Current

Gate Current

Total Power Dissipation

Channel Temperature

Storage Temperature

V

DS

V

GS

V

GD

I

D

I

G

P

T(*)

T

ch

T

stg

15

鈥?

鈥?8

27

180

110

175

鈥?5 to +175

V

V

V

A

mA

W

擄

C

擄

C

*T

C

= 25

擄

C

Caution

Please handle this device at static-free workstation, because this is an electrostatic sensitive

device.

Document No. P12094EJ1V0DS00 (1st edition)

Date Published November 1996 N

Printed in Japan

漏

1996

next

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