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NE894M03 Datasheet

  • NE894M03

  • NECs NPN SILICON TRANSISTOR

  • 8頁

  • CEL   CEL

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NEC's NPN SILICON TRANSISTOR NE894M03
FEATURES
鈥?/div>
MINIATURE M03 PACKAGE:
鈥?Small transistor outline
鈥?Low pro鏗乴e / 0.59 mm package height
鈥?Flat lead style for better RF performance
IDEAL FOR > 3 GHz OSCILLATORS
LOW NOISE, HIGH GAIN
LOW C
re
UHSO 25 GHz PROCESS
1.4 鹵0.1
0.45
(0.9)
0.45
1
0.2鹵0.1
2
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE M03
1.2鹵0.05
0.8鹵0.1
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
UE
0.3鹵0.1
3
DESCRIPTION
NEC's NE894M03 transistor is designed for oscillator appli-
cations above 3 GHz. The NE894M03 features low voltage,
low current operation, low noise, and high gain. NEC's low
pro鏗乴e/鏗俛t lead style "M03" package is ideal for today's portable
wireless applications.
0.59鹵0.05
+0.1
0.15 -0.05
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C)
PART NUMBER
EIAJ
1
REGISTERED NUMBER
PACKAGE OUTLINE
SYMBOLS
f
T
|S
21E
|
|NF
C
re
I
CBO
I
EBO
h
FE
2
NE894M03
2SC5786
M03
UNITS
GHz
dB
dB
pF
nA
nA
MIN
17
10
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
50
TYP
20
12
1.4
0.22
鈥?/div>
鈥?/div>
鈥?/div>
MAX
鈥?/div>
鈥?/div>
2.5
0.30
100
100
100
PARAMETERS AND CONDITIONS
Gain Bandwidth at V
CE
= 1 V, I
C
= 20 mA, f = 2 GHz
Insertion Power Gain at V
CE
= 1 V, I
C
= 20 mA, f = 2 GHz
Noise Figure at V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz, Z
S
= Z
OPT
Reverse Transfer Capacitance at V
CB
= 0.5 V, I
E
= 0 mA, f = 1 MHz
Collector Cutoff Current at V
CB
= 5 V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
DC Current Gain at V
CE
= 1 V, I
C
= 5 mA
2
3
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width
鈮?/div>
350
碌s,
duty cycle
鈮?/div>
2 %.
3. Collector to base capacitance when the emitter is grounded
California Eastern Laboratories

NE894M03 產(chǎn)品屬性

  • NEC

  • Single

  • NPN

  • 0.035 A

  • 105 mW

  • M03

  • SMD/SMT

  • 100

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