鈥?/div>
1
0.25
1.0
0.4
DESCRIPTION
The NE856M23 transistor is designed for low cost amplifier
and oscillator applications. Low noise figure, high gain and high
current capability equate to wide dynamic range and excellent
linearity. NEC's new low profile/ceramic substrate style "M23"
package is ideal for today's portable wireless applications. The
NE856 is also available in chip, Micro-x, and eight different low
cost plastic surface mount package styles.
0.6
0.15
2
3
0.25
0.2
0.15
BOTTOM VIEW
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C)
EIAJ
1
REGISTERED
SYMBOLS
f
T
NF
|S
21E
|
2
h
FE2
I
CBO
I
EBO
C
RE3
PART NUMBER
NUMBER
PACKAGE OUTLINE
UNITS
GHz
dB
dB
碌A(chǔ)
碌A(chǔ)
pF
0.7
7
80
MIN
3
NE856M23
2SC5649
M23
TYP
4.5
1.4
10.0
145
1
1
1.5
2.5
MAX
PARAMETERS AND CONDITIONS
Gain Bandwidth at V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
Noise Figure at V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
Insertion Power Gain at V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
Forward Current Gain at V
CE
= 3 V, I
C
= 7 mA
Collector Cutoff Current at V
CB
= 10 V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
Feedback Capacitance at V
CB
= 3 V, I
E
= 0, f = 1 MHz
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width
鈮?/div>
350
碌s,
duty cycle
鈮?/div>
2 %.
3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.
0.55
California Eastern Laboratories
1
2
