音影先锋亚洲天堂网|电影世界尽头的爱完整版播放|国产 熟女 91|高清无码免费观看欧美日韩|韩国一区二区三区黄色录像|美女亚洲加勒比在线|亚洲综合网 开心五月|7x成人在线入口|成人网站免费日韩毛片区|国产黄片?一级?二级?三级

NE856M03-A Datasheet

  • NE856M03-A

  • California Eastern Labs [NPN SILICON TRANSISTOR]

  • CEL   CEL

掃碼查看芯片數(shù)據(jù)手冊(cè)

上傳產(chǎn)品規(guī)格書

PDF預(yù)覽

NPN SILICON TRANSISTOR NE856M03
FEATURES
鈥?/div>
NEW M03 PACKAGE:
鈥?Smallest transistor outline package available
鈥?Low profile/0.59 mm package height
鈥?Flat lead style for better RF performance
LOW NOISE FIGURE:
NF = 1.4 dB at 1 GHz
HIGH COLLECTOR CURRENT:
I
CMAX
= 100 mA
1.4 鹵0.1
0.45
(0.9)
0.45
1
0.2鹵0.1
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE M03
1.2鹵0.05
0.8鹵0.1
2
鈥?/div>
鈥?/div>
TC
3
0.3鹵0.1
DESCRIPTION
NEC's NE856M03 transistor is designed for low cost amplifier
and oscillator applications. Low noise figure, high gain and high
current capability equate to wide dynamic range and excellent
linearity. NEC's new low profile/flat lead style "M03" package
is ideal for today's portable wireless applications. The NE856
is also available in chip, Micro-x, and eight different low cost
plastic surface mount package styles.
0.59鹵0.05
+0.1
0.15 -0.05
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C)
EIAJ
1
REGISTERED
SYMBOLS
f
T
NF
|S
21E
|
2
h
FE2
I
CBO
I
EBO
C
RE3
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width
鈮?/div>
350
碌s,
duty cycle
鈮?/div>
2 %.
3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.
PART NUMBER
NUMBER
PACKAGE OUTLINE
UNITS
GHz
dB
dB
碌A(chǔ)
碌A(chǔ)
pF
0.7
7.0
80
MIN
3.0
NE856M03
2SC5432
M03
TYP
4.5
1.4
10.0
145
1.0
1.0
1.5
2.5
MAX
PARAMETERS AND CONDITIONS
Gain Bandwidth at V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
Noise Figure at V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
Insertion Power Gain at V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
Forward Current Gain at V
CE
= 3 V, I
C
= 7 mA
Collector Cutoff Current at V
CB
= 10 V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
Feedback Capacitance at V
CB
= 3 V, I
E
= 0, f = 1 MHz
California Eastern Laboratories

NE856M03-A 產(chǎn)品屬性

  • 1

  • 分離式半導(dǎo)體產(chǎn)品

  • RF 晶體管 (BJT)

  • -

  • NPN

  • 12V

  • 4.5GHz

  • 1.4dB ~ 2.5dB @ 1GHz

  • -

  • 125mW

  • 80 @ 7mA，3V

  • 100mA

  • 表面貼裝

  • SOT-523

  • 3-SuperMiniMold

  • 散裝

NE856M03-A相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
    描述
    廠商
    下載
  • 英文版
    NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
    NEC
  • 英文版
    NPN SILICON HIGH FREQUENCY TRANSISTOR
    CEL
  • 英文版
    NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
    NEC [NEC]
  • 英文版
    1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
    NEC
  • 英文版
    1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
    NEC [NEC]
  • 英文版
    2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
    NEC
  • 英文版
    2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
    NEC [NEC]
  • 英文版
    NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
    NEC
  • 英文版
    NPN SILICON HIGH FREQUENCY TRANSISTOR
    CEL
  • 英文版
    NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
    NEC [NEC]
  • 英文版
    NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
    NEC
  • 英文版
    NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
    NEC [NEC]
  • 英文版
    NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
    NEC
  • 英文版
    NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
    NEC [NEC]
  • 英文版
    NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
    NEC
  • 英文版
    NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
    NEC [NEC]
  • 英文版
    NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
    NEC
  • 英文版
    NPN SILICON HIGH FREQUENCY TRANSISTOR
    CEL
  • 英文版
    NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
    NEC [NEC]
  • 英文版
    NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
    NEC

掃碼下載APP，
一鍵連接廣大的電子世界。

在線人工客服

買家服務(wù)：
賣家服務(wù)：
技術(shù)客服：

0571-85317607

網(wǎng)站技術(shù)支持

13606545031

客服在線時(shí)間周一至周五
9:00-17:30

關(guān)注官方微信號(hào)，
第一時(shí)間獲取資訊。

建議反饋

聯(lián)系人：

聯(lián)系方式：

按住滑塊，拖拽到最右邊
>>
感謝您向阿庫提出的寶貴意見，您的參與是維庫提升服務(wù)的動(dòng)力！意見一經(jīng)采納，將有感恩紅包奉上哦！