C-BAND MEDIUM POWER GaAs MESFET NE850R599A
FEATURES
鈥?HIGH OUTPUT POWER:
0.5 W
鈥?HIGH LINEAR GAIN:
9.5 dB
鈥?HIGH EFFICIENCY (PAE):
38%
鈥?SUPERIOR INTERMODULATION DISTORTION
鈥?INDUSTRY STANDARD PACKAGING
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE 99
5.2鹵0.3
1.0鹵0.1
4.0 MIN BOTH LEADS
Gate
蠁2.2鹵0.2
4.3鹵0.2
4.0鹵0.1
Source
DESCRIPTION
The NE850R599A is a medium power GaAs MESFET de-
signed for up to a 1/2W output stage or as a driver for higher
power devices. The device has no internal matching and can
be used at frequencies from UHF to 8.5 GH
Z
. Equivalent
performance in a chip package can be obtained by using only
1 cell of the NE8500100 chip. The chips used in this series
offer superior reliability and consistent performance for which
NEC microwave semiconductors are known.
Drain
0.6鹵0.1
5.2鹵0.3
11.0鹵0.15
15.0鹵0.3
+.06
0.1 -.02
0.2 MAX
1.7鹵0.15
5.0 MAX
6.0鹵0.2
1.2
RECOMMENDED OPERATING LIMITS
SYMBOLS
V
DS
T
CH
G
COMP
R
G
PARAMETERS
Drain to Source Voltage
Channel Temperature
Gain Compression
Gate Resistance
UNITS MIN
V
擄C
dB
K鈩?/div>
9
TYP MAX
10
130
3.0
1
ELECTRICAL CHARACTERISTICS
(T
C
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
CHARACTERISTICS
Power Out at Fixed Input Power
Power Added Efficiency
Drain Source Current
Gate to Source Current
Linear Gain
Saturated Drain Current
Pinch-off Voltage
Transconductance
Thermal Resistance (channel to case)
= 25擄C)
NE850R599A
99
UNITS
dBm
%
A
mA
dB
mA
V
mS
擄C/W
220
-3.0
150
60
-1.6
9.5
430
-1.0
MIN
25.5
TYP
26.5
38
140
1.6
P
IN
= 7 dBm
2
V
DS
= 2.5 V; V
GS
= 0 V
V
DS
= 2.5 V; I
DS
= 2 mA
V
DS
= 2.5 V; I
DS
= I
DSS
MAX
TEST CONDITIONS
P
IN
= 18.5 dBm
1
V
DS
= 10 V; I
DSQ
= 100 mA
f = 7.2 GHz; R
G
= 1 K鈩?/div>
Functional
Characteristics
P
OUT
畏
ADD
I
DS
I
GS
G
L
Electrical
Characteristic
s
I
DSS
V
P
g
m
R
TH
California Eastern Laboratories
1
2
