GENERAL PURPOSE
L TO X-BAND GaAs MESFET
FEATURES
鈥?LOW NOISE FIGURE:
0.8 dB typical at 4 GHz
鈥?HIGH ASSOCIATED GAIN:
12 dB typical at 4 GHz
鈥?L
G
= 1.0
碌m,
W
G
= 400
碌m
鈥?LOW COST METAL/CERAMIC PACKAGE
鈥?TAPE & REEL PACKAGING OPTION AVAILABLE
Optimum Noise Figure, NF
OPT
(dB)
4
3.5
G
A
3
2.5
2
1.5
1
NF
0.5
0
1
NE76184AS
NOISE FIGURE & ASSOCIATED
GAIN vs. FREQUENCY
V
DS
= 3 V, I
DS
= 10 mA
24
21
18
15
12
9
6
3
0
10
20
DESCRIPTION
NE76184AS is a high performance gallium arsenide metal
semiconductor field effect transistor housed in an epoxy-
sealed, metal/ceramic package. Its low noise figure makes
this device appropriate for use in the second or third stages of
low noise amplifiers operating in the 1-12 GHz frequency
range. The device is fabricated using ion implantation for
improved RF and DC performance, reliability, and uniformity.
The NE76184AS is suitable for DBS, TVRO, GPS and other
commercial applications.
NEC's stringent quality assurance and test procedures en-
sure the highest reliability and performance.
Frequency, f (GHz)
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C)
PART NUMBER
PACKAGE OUTLINE
SYMBOL
NF
1
G
A1
P
1dB
PARAMETERS AND CONDITIONS
Noise Figure at V
DS
= 3 V, I
D
= 10 mA, f = 4 GHz
Associated Gain at V
DS
= 3 V, I
D
= 10 mA, f = 4 GHz
Output Power at 1 dB Gain Compression Point, f = 4 GHz
V
DS
= 3 V, I
DS
= 10 mA
V
DS
= 3 V, I
DS
= 30 mA
Gain at P
1dB
, f = 4 GHz
V
DS
= 3 V, I
DS
= 10 mA
V
DS
= 3 V, I
DS
= 30 mA
Saturated Drain Current at V
DS
= 3 V, V
GS
= 0
Pinch Off Voltage at V
DS
= 3 V, I
D
= 100
碌A(chǔ)
Transconductance at V
DS
= 3 V, I
D
= 10 mA
Gate to Source Leak Current at V
GS
= -5 V
Thermal Resistance
UNITS
dB
dB
dBm
dBm
dB
dB
mA
V
mS
碌A(chǔ)
擄C/W
30
-3.0
20
MIN
NE76184AS
84AS
TYP
0.8
12.0
12.5
15.0
11.5
13.5
60
-1.1
45
10
300
100
-0.5
MAX
1.4
G
1dB
I
DSS
V
P
g
m
I
GSO
R
TH
Note:
1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually
measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line
as a "go-no-go" screening test with the fixture tuned for the "generic" type but not for each specimen.
California Eastern Laboratories
Associated Gain, G
A
(dB)
1
2
3
4
