DATA SHEET
GaAs MES FET
NE76184A
GENERAL PURPOSE FET N-CHANNEL GaAs MES FET
DESCRIPTION
NE76184A is a N-channel GaAs MES FET housed in ce-
ramic package. The device is fabricated by ion implantation for
improved RF and DC performance reliability and uniformity. Its
excellent low noise and high associated gain make it suitable
for DBS, TVRO, GPS and another commercial systems.
PACKAGE DIMENSIONS
(Unit: mm)
1.78 鹵0.2
1
L
L
1.78 鹵0.2
0.5 TYP.
4
FEATURES
鈥?Low noise figure & High associated gain
NF = 0.8 dB TYP., G
a
= 12 dB TYP. at f = 4 GHz
ORDERING INFORMATION
PART NUMBER
NE76184A-SL
NE76184A-T1
NE76184A-T1A
SUPPLYING
FORM
STICK
Tape & reel
LEAD LENGTH
L = 1.7 mm MIN.
L = 1.0
鹵
0.2 mm
2
L
3
J
L
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 藲C)
Drain to Source Voltage
Gate to Source Voltage
Gate to Drain Voltage
Drain Current
Total Power Dissipation
Channel Temperature
Storage Temperature
V
DS
V
GSO
V
GDO
I
D
P
tot
T
ch
T
stg
5.0
V
鈥?.0
V
鈥?.0
V
100
mA
300
mW
150
藲C
鈥?5 to +150 藲C
1. Source
2. Drain
3. Source
4. Gate
ELECTRICAL CHARACTERISTICS (T
A
= 25 藲C)
PARAMETER
Gate to Source Leak Current
Saturated Drain Current
Gate to Source Cutoff Voltage
Transconductance
Noise Figure
Associated Gain
Power Gain
SYMBOL
I
GSO
I
DSS
V
GS (off)
g
m
NF
G
a
G
s
MIN.
鈥?/div>
30
鈥?.5
20
鈥?/div>
鈥?/div>
鈥?/div>
TYP.
鈥?/div>
鈥?/div>
鈥?/div>
45
0.8
12
6
MAX.
10
100
鈥?.0
鈥?/div>
1.4
鈥?/div>
鈥?/div>
UNIT
TEST CONDITIONS
V
GS
= 鈥? V
V
DS
= 3 V, V
GS
= 0
V
DS
= 3 V, I
D
= 100
碌
A
V
DS
= 3 V, I
D
= 10 mA
V
DD
= 3 V
I
D
= 10 mA
f = 12 GHz
f = 4 GHz
碌
A
mA
V
mS
dB
dB
dB
I
DSS
rank is specified as follows. (K: 30 to 100 mA, N: 30 to 65 mA, M: 55 to 100 mA)
Document No. P10852EJ2V0DS00 (2nd edition)
(Previous No. TC-2303)
Data Published October 1995 P
Printed in Japan
漏
0.1
1.7 MAX.
0.5 TYP.
1991
NE76100相關(guān)型號(hào)PDF文件下載
-
型號(hào)
版本
描述
廠商
下載
-
英文版
LOW NOISE KU-K BAND GAAS MESFET
-
英文版
LOW NOISE KU-K BAND GAAS MESFET
NEC [NEC]
-
英文版
LOW NOISE L TO Ku BAND GaAs MESFET
-
英文版
LOW NOISE L TO Ku BAND GaAs MESFET
NEC [NEC]
-
英文版
LOW NOISE L TO Ku-BAND GaAs MESFET
-
英文版
LOW NOISE L TO Ku-BAND GaAs MESFET
NEC [NEC]
-
英文版
C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET
-
英文版
C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET
NEC [NEC]
-
英文版
GENERAL PURPOSE FET N-CHANNEL GaAs MES FET
-
英文版
GENERAL PURPOSE FET N-CHANNEL GaAs MES FET
NEC [NEC]
-
英文版
L to S BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET
-
英文版
L to S BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET
NEC [NEC]
-
英文版
LOW NOISE L TO Ku BAND GaAs MESFET
-
英文版
LOW NOISE L TO Ku BAND GaAs MESFET
NEC [NEC]
-
英文版
ETC
-
英文版
LOW NOISE L TO Ku BAND GaAs MESFET
-
英文版
LOW NOISE L TO Ku BAND GaAs MESFET
NEC [NEC]
-
英文版
GENERAL PURPOSE GaAs MESFET
-
英文版
GENERAL PURPOSE GaAs MESFET
NEC [NEC]
-
英文版
GENERAL PURPOSE GaAs MESFET
1
2
3
4
5
6
7
8
9
10
