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NE76084S Datasheet

  • NE76084S

  • LOW NOISE L TO Ku BAND GaAs MESFET

  • 4頁

  • NEC   NEC

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LOW NOISE
L TO Ku BAND GaAs MESFET
FEATURES
鈥?LOW NOISE FIGURE
NF = 1.6 dB TYP at f = 12 GHz
鈥?HIGH ASSOCIATED GAIN
G
A
= 9 dB TYP at f = 12 GHz
鈥?L
G
= 0.3
碌m,
W
G
= 280
碌m
鈥?LOW COST METAL/CERAMIC PACKAGE
鈥?ION IMPLANTATION
鈥?AVAILABLE IN TAPE & REEL
Noise Figure, NF (dB)
4
3.5
Ga
3
2.5
2
1.5
1
NF
0.5
NE76084S
NOISE FIGURE AND ASSOCIATED GAIN
vs. FREQUENCY
V
DS
= 3 V, I
DS
= 10 mA
24
21
18
15
12
9
6
3
0
1
10
20
DESCRIPTION
The NE76084S provides a low noise figure and high associ-
ated gain through 14 GHz. The NE76084S device is fabri-
cated by ion implantation for improved RF and DC perfor-
mance, reliability, and uniformity. The device features a
recessed 0.3 micron gate and triple epitaxial technology.
NEC's stringent quality assurance and test procedures assure
the highest reliability and performance.
0
Frequency, f (GHz)
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
NF
OPT1
G
A
P
1dB
I
DSS
V
P
g
m
I
GSO
R
TH (CH-A)
PARAMETERS AND CONDITIONS
Optimum Noise Figure at V
DS
= 3 V, I
DS
= 10 mA, f = 12 GHz
Associated Gain at V
DS
= 3 V, I
DS
= 10 mA, f = 12 GHz
Output Power at 1 dB Compression, V
DS
= 3 V, I
DS
= 30 mA, f = 12 GHz
Saturated Drain Current at V
DS
= 3 V, V
GS
= 0
Pinch-off Voltage at V
DS
= 3 V, I
DS
= 0.1 mA
Transconductance, V
DS
= 3 V, I
DS
= 10 mA
Gate to Source Leakage Current, V
GS
= -4 V
Thermal Resistance (Channel to Ambient)
UNITS
dB
dB
dBm
mA
V
mS
碌A(chǔ)
擄C/W
15
-3.0
30.0
8.0
MIN
NE76084S
2
84S
TYP
1.6
9.0
14.5
30
-0.8
40.0
1.0
50
-0.5
70.0
10.0
625
MAX
1.8
Notes:
1. Typical values of noise figures are those obtained when 50% of the devices from a large number of lots were individually measured in a
circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line as a "go-
no-go" screening test with the fixture tuned for the "generic" type but not for each specimen.
2. Package type 84S recommended for use below 13 GHz. Refer to NE76083A for use above 13 GHz.
California Eastern Laboratories
Associated Gain, G
A
(dB)

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