LOW NOISE
L TO Ku BAND GaAs MESFET
FEATURES
鈥?LOW NOISE FIGURE
NF = 1.6 dB TYP at f = 12 GHz
Noise Figure, NF (dB)
4
3.5
Ga
3
2.5
2
1.5
1
NF
0.5
0
1
NE76000
NOISE FIGURE & ASSOCIATED GAIN
vs. FREQUENCY
V
DS
= 3 V, I
DS
= 10 mA
24
21
18
15
12
9
6
3
0
10
20
鈥?L
G
= 0.3
碌m,
W
G
= 280
碌m
鈥?ION IMPLANTATION
DESCRIPTION
The NE76000 provides a low noise figure and high associated
gain through K-Band. The NE760 devices are fabricated by
ion implantation for improved RF and DC performance, reli-
ability, and uniformity. These devices feature a recessed 0.3
micron gate and triple epitaxial technology. The surface of the
device, except for bonding pads, is passivated with SiO
2
and
Si
3
N
4
for scratch protection as well as surface stability.
NEC's stringent quality assurance and test procedures en-
sure the highest reliability and performance.
Frequency, f (GHz)
ELECTRICAL SPECIFICATIONS
(T
A
= 25擄C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
NF
OPT1
PARAMETERS AND CONDITIONS
Optimum Noise Figure at V
DS
= 3 V, I
DS
= 10 mA,
f = 4 GHz
f = 12 GHz
Associated Gain at V
DS
= 3 V, I
DS
= 10 mA,
f = 4 GHz
f = 12 GHz
Output Power at 1 dB Compression, V
DS
= 3 V, I
DS
= 30 mA, f = 12 GHz
Saturated Drain Current at V
DS
= 3 V, V
GS
= 0
Pinch-off Voltage at V
DS
= 3 V, I
DS
= 0.1 mA
Transconductance, V
DS
= 3 V, I
DS
= 10 mA
Gate to Source Leakage Current, V
GS
= -4 V
Thermal Resistance (Channel to Case)
UNITS
dB
dB
dB
dB
dBm
mA
V
mS
碌A(chǔ)
擄C/W
15
-3.0
30.0
NE76000
00 (CHIP)
MIN
TYP MAX
0.6
1.6
13.0
9.0
14.5
30
-0.8
40.0
1.0
10.0
190
50
-0.5
50
-3.0
-0.8
30.0
1.0
190
80
-0.5
NE76000L
00 (CHIP)
MIN
TYP MAX
1.8
1.8
G
A 1
8.0
8.0
P
1dB
I
DSS
V
P
g
m
I
GSO
R
TH (CH-C)2
Notes:
1. RF performance is determined by packaging and testing 10 samples per wafer; wafer rejection criteria for standard devices is 2 rejects for 10
samples.
2. Chip mounted on infinite heat sink.
California Eastern Laboratories
Associated Gain, G
A
(dB)
鈥?HIGH ASSOCIATED GAIN
G
A
= 9 dB TYP at f = 12 GHz
1
2
3
4
5
6
